Samsung adds Grandis Inc. for memory R&D

August 2, 2011 — IC maker Samsung Electronics Co. Ltd. acquired Grandis Inc., a Silicon Valley maker of spin transfer torque random access memory (STT-RAM). Effective late July 2011, the acquisition includes the full scope of technology, assets and human resources under Grandis, Inc.

Samsung will integrate Grandis into its next-generation memory chip R&D operations, investigating new semiconductor materials and structures.

Grandis offers expertise in next-generation memory technologies and strong technical capabilities. Its proprietary STT-RAM technology has all the characteristics of a universal memory: non-volatility, low power consumption, ultra-fast read and write speed, unlimited endurance, and scalability beyond the 32 nm semiconductor node.

Visit the Grandis website at

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