November 15, 2011 — AKHAN Technologies, advanced diamond electron device design company, is commercializing diamond microelectronics with a shallow n-type diamond material over silicon.
The Miraj Diamond platform process creates n-type diamond material over silicon with previously undemonstrated characteristics, such as shallow ionization energy of 250meV, high carrier mobility (greater than 1000 cm2/Vs in nanocrystalline diamond thin films), no graphitic phases, and 900A/mm2 current density at +2V forward bias in low-voltage/high-current diode device applications.
|Diamond microelectronics wafer surface. SOURCE: AKHAN Technologies|
AKHAN Technologies claims that the diamond material shows the shallowest ionization energy, highest current density, fastest electron mobility, and highest power handling capability seen in diamond, specifically n-type diamond.
The AKHAN Miraj Diamond platform features shallow n-type diamond and n-type ohmic contact, electronically outperforming any n-type semiconductor diamond at any applied voltage, while retaining mirror-like smoothness (see image above), with films often smoother at the end of processing than at the beginning.
Microchips fabricated from the AKHAN Miraj Diamond platform boast higher speeds (1841cm2/Vs versus <1400 cm2/Vs for electron mobility and 1000 cm2/Vs versus <450 cm2/Vs for hole mobility), with increased power handling capability (75W/mm demonstrated [DC] in low field), without overheating (600