Diamond films no longer in the rough with AKHAN Technologies launch

November 28, 2011 — AKHAN Technologies has developed a shallow n-type diamond material over silicon that has characteristics such as a shallow ionization energy (250meV), high carrier mobility (>1000cm2/Vs in nanocrystalline diamond thin films), and no graphitic phases. The latter is important because graphitic films translate to low mobility (because of scattering sites). The material also provides for a 900A/mm2 current density at +2V forward bias in low voltage high current diode device applications.

In a detailed discussion about the technology in a podcast interview with ElectroIQ.com (below), Adam Khan, president of AKHAN Technologies, said that the bottleneck in development of diamond films has always been the fabrication of n-type diamond,


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.