|IEDM 2011 slideshow|
|Graphene devices in a 200mm fab|
|Hynix pushes NAND limits|
|FinFETs for sub-20nm SoCs|
|Mapping FinFET carrier profiles in 3D|
|Hollow copper 3D TSVs|
Researchers from IBM demonstrate 200mm wafer-scale graphene devices — graphene FETs and RF passives — processed entirely in a standard silicon fab, billed as "a significant step toward moving graphene from an interesting curiosity into a manufacturable technology." Key to this work was building a gate dielectric on the inherently inert surface; to solve this, Si wafers were built with predefined embedded gate structures, upon which were transferred CVD-fabricated graphene layers.
The end result, a proof-of-concept frequency doubler, demonstrated ~25dB conversion gain at 2GHz, which was seen constant from 25-200