Graphene devices in a 200mm fab

IEDM 2011 slideshow
Graphene devices in a 200mm fab
Hynix pushes NAND limits
FinFETs for sub-20nm SoCs
Mapping FinFET carrier profiles in 3D
Hollow copper 3D TSVs

Researchers from IBM demonstrate 200mm wafer-scale graphene devices — graphene FETs and RF passives — processed entirely in a standard silicon fab, billed as "a significant step toward moving graphene from an interesting curiosity into a manufacturable technology." Key to this work was building a gate dielectric on the inherently inert surface; to solve this, Si wafers were built with predefined embedded gate structures, upon which were transferred CVD-fabricated graphene layers.

The end result, a proof-of-concept frequency doubler, demonstrated ~25dB conversion gain at 2GHz, which was seen constant from 25-200


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