November 8, 2011 – ACN Newswire — Micron Technology Inc. and Singapore’s A*STAR Data Storage Institute (DSI) will collaborate on spin transfer torque magnetic random access memory (STT-MRAM) development, both investing in the research and collaborating on the projects, over the next three years.
STT-MRAM is a non-volatile memory architecture, like NAND Flash, that could overcome NAND’s limitations in endurance and high write power for solid-state drives (SSDs). STT-MRAM also has potential to address technology scaling roadmap challenges of volatile memory such as dynamic RAM (DRAM).
The collaboration is one of Micron’s multiple emerging memory development programs, said Scott DeBoer, Micron VP of research and development. Dr. Pantelis Alexopoulos, executive director of DSI, called the plan "a good opportunity" to combine STT-MRAM expertise from DSI with memory product development expertise at Micron.
Micron Technology Inc. provides advanced semiconductors: DRAM, NAND and NOR flash memory. Visit www.micron.com.
The Data Storage Institute (DSI) is a member of the Agency for Science, Technology and Research (A*STAR). A*STAR, the Agency for Science, Technology and Research, is Singapore’s lead agency for fostering world-class scientific research and talent for a vibrant knowledge-based Singapore. For more information, please visit http://www.dsi.a-star.edu.sg.