November 28, 2011 – Next week is the semiconductor industry’s flagship technical conference show-and-tell: the 57th annual IEEE International Electron Devices Meeting (IEDM, Dec. 5-7), this year held in the East Coast venue of Washington, DC. This year’s slate has a strong overall emphasis on circuit-device interaction, with ~220 presentations, panels and special sessions and short courses, and coverage in related sectors: optoelectronics, MEMS/NEMS, energy-related devices, and bioelectronics. Toyota, Intel, and CEA will give plenary talks, and energy harvesting devices get a special focus. Evening panel sessions will address 3D integration and future power chip materials (SiC vs. GaN).

Solid State Technology will have IEDM 2011 covered from multiple angles: podcast interviews with key paper presenters, on-site show reporting, blogs from industry observers attending/presenting at the show, and plenty of post-show analysis. (Chipworks’ Dick James has already previewed an Intel paper on edge dislocation stress.) To kick things off, we’ve scanned the entire IEDM 2011 program to present a quick sampling of some of the more intriguing papers, from graphene and 3D devices to future exotic device structures/materials and even solar-cell technologies. Enjoy the slideshow!