November 10, 2011 — OSRAM Opto Semiconductors increased its IR Power Topled with lens (SFH 4258S/4259S) optical output by 80% over the standard version by integrating a thin-film chip. The infrared (IR) light emitting diode (LED) has the same surface area and drive current.
OSRAM Opto used Nanostack technology to create the thin-film chip with 2 p-n junctions grown one on top of the other. Because of the series circuit, the voltage is higher by approximately a factor of 2. The increased output in the same package footprint suits designs where real estate, even illumination, and cost are factors, said OSRAM’s representatives.
The IR Power Topled produces 80mW optical output power from an operating current of 70mA. The new LED emits at a wavelength of 850nm. It is available with beam angles of