ULVAC CVD-Co, -Ni system suits 3D gate, MEMS fab

December 1, 2011 — ULVAC Inc. developed the ENTRONTM-EX2 W300 CVD-Ni/CVD-Co system for CVD-Ni and CVD-Co silicidation of 3D semiconductor gates and MEMS. The system is a response to a semiconductor industry transition from PVD to CVD in advanced 3D gate structure film step coverage, ULVAC reports.

The system processes silicide applications as well as micro electro mechanical systems (MEMS) with Ni and Co films. It features 100% step coverage for the desired feature size, reduced film impurity, high throughput CVD, thin film capability for future-node scaling, and high volume production speed with low COC.

The ENTRONTM-EX2 W300 CVD-Ni/CVD-Co system offers 2 pretreatment types for silicide processing: in-situ single-wafer chemical dry treatment (CDT) with CVD-Ni/CVD-Co, or ex-situ batch CDT RISE with CVD-Ni/CVD-Co.

By incorporating an annealing module in the ENTRONTM-EX2 W300, the whole silicidation process can be performed on this one system.

The ENTRONTM-EX2 W300 has single and tandem-type platforms; tandem platforms can integrate more complex processes (such as back-end processes).

Options include a process data monitoring system (EDPMS), a non-contact radiation temperature monitor, and an ULVAC compact residual gas analysis monitor (Qulee).

The new


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