July 11, 2011 — This week at SEMICON West in San Francisco, imec is demonstrating a viable implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain and 3D integration of a commercial DRAM chip on top of a logic IC.

Imec SiGe IF-QW pFET a "viable option" for 16nm node

Imec has fabricated implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain. Short channel control and logic performance results are strong, benchmarked against competing technologies (SOI nFET, SiGe-FET). Drain-induced barrier lowering is ~110mV/V at 35nm-LG and 1mA/