January 20, 2012 — United Silicon Carbide Inc. (USCi) will develop next-generation silicon carbide (SiC) devices with AIXTRON SE’s VP2400 hot-wall chemical vapor deposition (CVD) tool. USCi plans to install the CVD system in Q3 2012.
The 2400 system with Aixtron’s SiC Planetary Reactor technology will be used to rapidly develop novel SiC device designs. It achieves high growth rates for high-voltage (5-15kV) SiC devices with 100um+ thickness.
"Having evaluated the market for SiC epitaxy equipment, and based upon our success with merchant SiC epitaxy vendors utilizing similar tools, we have selected the AIXTRON VP2400HW system for the superior quality of both n- and p-type SiC epitaxial layers," said Dr. John Hostetler, Director of Engineering at USCi, adding "our ownership of a 2400 will greatly facilitate our production process transfer to our merchant epitaxial wafer partners."
AIXTRON SE provides deposition equipment to the semiconductor industry. Learn more at www.aixtron.com
United Silicon Carbide, inc. is a semiconductor company specializing in the development of high efficiency Silicon Carbide (SiC) devices including Schottky Barrier Diodes, JFETs, BJTs, Solid State Circuit Breakers, Power Modules, and Custom SiC integrated circuits.