January 5, 2012 — Standards org JEDEC Solid State Technology Association released a new standard for wide I/O mobile DRAM: JESD229 Wide I/O Single Data Rate (SDR). Wide I/O mobile DRAM increases die integration — stacking chips with through silicon via (TSV) interconnects with a system on chip (SoC) — and improves bandwidth, latency, power, weight and form factor.

The standard defines features, functionalities, AC and DC characteristics, and ball/signal assignments. It is particularly well-suited for applications requiring extreme power efficiency and increased memory bandwidth (up to 17GBps). Wide I/O offers twice the bandwidth of the previous generation standard, LPDDR2, at the same rate of power consumption.

Also read: IPC, JEDEC devise package strain test and JEDEC releases serial NOR Flash standard

Mobile wide-I/O DRAM are used in smartphones, tablets, handheld gaming consoles and other mobile devices. Sophie Dumas, Chairman of the JC-42.6 Subcommittee for Low Power Memories, notes that the high-resolution displays, high-quality graphics, and multi-tasking capabilities of next-gen devices require technologies like wide-I/O mobile DRAM.

JESD229 may be downloaded free of charge from the JEDEC website at http://www.jedec.org/sites/default/files/docs/JESD229.pdf.

JEDEC develops standards for the microelectronics industry. All JEDEC standards are available online, at no charge. For more information, visit www.jedec.org.

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