March 5, 2012 — HRL Laboratories LLC will now offer products in its gallium nitride (GaN) high electron mobility transistor (HEMT) technology commercially to customers in select markets, such as high-data-rate wireless links, radars and active sensors.

HRL’s GaN amplifiers offer more than 5x improvement in E and W-band output power compared to current state-of-the-art commercial solid-state technologies, the company reports. The transistors minimize the power module assembly complexity by eliminating power-combining multiple amplifiers. GaN also boasts intrinsic higher linearity for transmission of modulation schemes with higher spectral efficiency.

Also read: Electronic transport characterization of HEMT structures by Lake Shore Cryotronics and the Naval Research Lab

HRL is offering wideband 70 to 100 GHz GaN power amplifiers as well as a family of application-specific E and W-band power amplifiers covering the 71 to 76 GHz, 81 to 86 GHz and 90 to 96 GHz bands.

HRL Laboratories LLC is a corporate research-and-development laboratory owned by The Boeing Company and General Motors specializing in research into sensors and materials, information and systems sciences, applied electromagnetics, and microelectronics. HRL provides custom research and development and performs additional R&D contract services for its LLC member companies, the U.S. government, and other commercial companies. Learn more at www.hrl.com.