March 16, 2012 — Infineon Technologies (Germany) ordered the Probus-SiC silicon carbide (SiC) epitaxy film growth tool from Tokyo Electron Limited (TEL). It will be used to mass produce advanced SiC power devices.
The Probus-SiC grows advanced films on 6" and smaller wafers. It boasts automatic transfer and multi-reactor functions. The tool is designed to maintain uniformity and low defect density in high-throughput volume production.
Infineon will take delivery in the summer of 2012, marking an expansion in low-cost SiC fabrication business for TEL.
TEL provides advanced semiconductor manufacturing equipment. Learn more at http://www.tel.com/eng/index.htm.