AIXTRON MOCVD tool installed for GaN research at U of Warsaw

May 8, 2012 — University of Warsaw, Poland, researchers will grow gallium nitride (GaN) materials on a new AIXTRON SE Close Coupled Showerhead (CCS) metal organic chemical vapor deposition (MOCVD) reactor in a 3 x 2” wafer configuration. It will be installed at a dedicated cleanroom facility within the Institute of Experimental Physics of the University of Warsaw’s Faculty of Physics.

Gallium nitride is a compound semiconductor material used increasingly for light-emitting diodes (LEDs) and power electronics, among other applications in defense and commercial applications. New work is integrating GaN and silicon and GaN and diamond.

The University of Warsaw is Poland’s largest university and a leading European academic center. The experimental and theoretical research conducted at the Faculty of Physics is directed at physical systems of all kinds.

The system will be delivered in H2 2012 as part of the project “Physics as the basis for new technologies – development of modern research infrastructure at the Faculty of Physics of the University of Warsaw,” co-financed by the European Union.

The CCS reactor possesses a “good all-round combination of characteristics:” a very stable platform; optimized for the growth of nitride thin films for a range of requirements; with excellent reliability, ease of use and reproducibility, said Professor Roman Stepniewski, University of Warsaw.

“Professor Stepniewski’s team has a worldwide reputation for the quality of their work in advanced semiconductor materials, in particular in growth technology and basic studies of nitrides,” Dr. Frank Schulte, VP, AIXTRON Europe.

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