May 7, 2012 — AIXTRON SE’s long-time customer Formosa Epitaxy Inc. (FOREPI) ordered several MOCVD systems: 4 CRIUS II-XL systems in a 19 x 4” wafer configuration and 2 G5 HT reactors in a 14 x 4” wafer configuration. FOREPI is increasing capacity for ultra-high brightness (UHB) gallium nitride (GaN) blue and white light-emitting diode (LED) manufacture.
FOREPI will install the tools between Q3 and Q4 2012 in its new, state-of-the-art facility in the Pin-Jen industrial zone, Taiwan. The LED maker began using AIXTRON’s CRIUS II-XL system a few months ago, and decided to use it for 4” LED wafer capacity increases at the new Pin-Jen fab. FOREPI cited short time-to-production and high performance, throughput and yield for the purchase decision. The epitaxy tools FOREPI chose also offer “seamless process scale-up, excellent uniformity and highest throughput per footprint,” said AIXTRON COO Dr. Bernd Schulte.
The Close Coupled Showerhead (CCS) technology is used in AIXTRON’s current range of reactors. Reagents are introduced into the reactor through a water-cooled showerhead surface over the entire area of deposition. The showerhead is close to the substrates and is designed to enable precursors to be separated right up to the point where they are injected onto the substrates through a multiplicity of small tubes. The reagents are injected into the reactor chamber through separate orifices in a water-cooled showerhead injector, to create a very uniform distribution of reagent gases. Substrates are placed on top of a rotating susceptor, which is resistively heated. The three-zone heater enables adjustment of the temperature profile to provide temperature uniformity over the susceptor diameter.
AIXTRON provides MOCVD production technologies for semiconductor devices, such as LEDs, lasers, transistors and solar cells. For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6, DE000A1MMEF7; NASDAQ: AIXG, ISIN US0096061041), see www.aixtron.com.