June 21, 2012 – PRNewswire — Semiconductor and LED manufacturing equipment supplier Ultratech Inc. (NASDAQ:UTEK) shipped its 50th laser spike anneal (LSA) system, with an order from a major Asian foundry.
Laser spike anneal activates dopants and thermally removes defects potentially created at ion implant on the semiconductor wafer. Ultratech’s long-wavelength LSA technology enables higher performance and lower leakage, the company reports, targeting advanced semiconductors for high-end smartphones and media tablets.
Arthur W. Zafiropoulo, chairman and CEO, noted, "LSA is now implemented as the preferred technology for high-volume manufacturing of advanced logic devices from the 45 to 28nm nodes. As the industry continues to move to sub-28nm nodes…there will be additional process steps requiring LSA technology."
Of the 50 LSA systems sold, Ultratech has shipped more than 15 of its flagship LSA101 systems, which can achieve throughputs of up to 60wph. The LSA101 enables critical millisecond annealing applications for 28nm and below, with good within-die uniformity, layout-independent process results, and real-time closed-loop temperature control over the entire wafer. The system has a minimum dwell time of 200 microseconds, which minimizes overlay errors for devices with aggressive strain engineering.
Ultratech, Inc. (UTEK) designs, manufactures and markets photolithography and laser processing equipment. Visit Ultratech online at: www.ultratech.com.