Lattice Power ramps high-power GaN-on-Si LED production

June 12, 2012 – Marketwire — Lattice Power Corporation started volume production of its new-generation gallium nitride (GaN) high-power light-emitting diodes (LEDs) on silicon substrates.

Lattice Power says it achieves comparable performance in the volume GaN-on-Si LED chips as high-end chips on conventional sapphire substrates, at a much lower price point and with a well-established supply base of silicon wafers. Cost savings at larger-diameter wafers can be up to 70% over conventional LED products, Lattice Power asserts.

Twenty strategic customers have received the LEDs and will incorporate them into indoor and outdoor lighting applications. Also read: GaN-on-Si HB-LED demo from Lattice Power, ShineOn

Lattice Power’s silicon-substrate-based LED series encompasses four chip sizes: 28mm2, 35mm2, 45mm2, and 55mm2. Chip power ranges from 0.5 to 2W. The 45mm LED has an operation current of 350mA, producing 130-lumen cool white with an efficiency of 120 lumens/W.

Lattice Power recently launched production of smaller-size silicon-substrate LED chips for displays and signage.

Lattice Power is actively working on 150-mm GaN-on-Si technology and is expecting to transfer its production to the larger-diameter silicon substrates in 2013.

Lattice Power makes blue/white GaN-based LEDs on silicon substrates. The company is backed by leading venture capitalists, including GSR Ventures, Temasek Holdings, Mayfield Fund, AsiaVest Partners and IFC. For more information, visit

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