AIXTRON debuts GaN-on-Si MOCVD reactor technology

July 26, 2012 — AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, developed with customers in AIXTRON’s R&D lab.

Any existing G5 system can be upgraded to this latest version.

Figure. AIX G5+ offers fully rotationally symmetrical uniformity pattern on five wafers.

Power electronics makers are using GaN-on-Si technology, and future high-brightness light-emitting diodes (HB-LEDs) are in development on GaN-on-Si substrates, noted Dr. Rainer Beccard, VP, marketing at AIXTRON. Recent GaN-on-Si development has occured at Lattice Power, NXP Semiconductors, EpiGaN, Bridgelux, Toshiba, and Nitronex, among other semiconductor and LED makers.

GaN-on-Si offers high performance on a lower-cost substrate than sapphire. “Wafer size and material plays a crucial role when it comes to cost-effective manufacturing processes, and thus the transition to 200mm standard silicon wafers is a logical next step on the manufacturing roadmaps,” said Beccard.

The GaN-on-Si reactor was designed for high uniformity and yield. It was developed via simulations, which guided the “fundamentally new” hardware design in the 5 x 200mm configuration.

Select AIXTRON customers are using the AIX G5+, reporting fully rotationally symmetrical uniformity pattern on all five 200mm wafers, which are standard-thickness silicon substrates. These trials also show controlled wafer bow behavior.

AIXTRON provides MOCVD production technologies for semiconductor devices, such as LEDs, lasers, transistors and solar cells. For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6, DE000A1MMEF7; NASDAQ: AIXG, ISIN US0096061041), see

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