AKHAN characterizes diamond semiconductor material with Argonne Labs

August 15, 2012 – PRNewswire — AKHAN Technologies Inc., diamond electron device design company, is sharing characterization data relating to its Miraj Diamond materials, gleaned in collaborative work with the Center for Nanoscale Materials (CNM) at Argonne National Laboratory.

AKHAN presented at the 21st annual International Materials Research Congress (IMRC 2012), August 12-17 in Cancun, Mexico, during Symposium 1B,  Nanostructured Carbon Materials for MEMS/NEMS and Nano-Electronics, in “On Enabling Nanocrystalline Diamond for Device Use: Novel Ion Beam Methodology and the Realization of Shallow N-type Diamond.”

The characterization analysis shows both the crystalline characterization and electrical characterization for AKHAN’s n-type Nanocrystalline Diamond (NCD) films and PIN diode devices.

The data presented includes a molecular-level first glance of the newly characterized crystal structure, the outstanding crystal quality of the films, as well as breakthrough electrical performance of the fabricated AKHAN materials and devices.

AKHAN demonstrated the effectiveness of their process in their presentation at IMRC, with thin nanocrystalline diamond materials electrically outperforming microns-thick single-crystal diamond.

The presentation will be made available on the AKHAN Technologies website after the official XXI IMRC 2012 proceeds are released, anticipated late October.

AKHAN Technologies Inc., an Illinois Company, commercializes Diamond Lattice Technology for the global semiconductor community. For more information, please visit http://www.akhantech.com.

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