November 12, 2012 – X-Fab Silicon Foundries has inked a deal with Anvo-Systems Dresden to offer high-speed non-volatile memory (NVM) combining SRAM, DRAM, and SONOS flash technologies in a compact design.
Under the partnership, Anvo will provide the IP and design expertise, and X-Fab will provide the semiconductor manufacturing process, capacity, and quality assurance. The foundry also has installed a dedicated 0.18μm manufacturing process on 200mm wafers optimized for highly reliable memories based on SONOS architecture.
Anvo’s nvSRAM approach combines the typical SRAM features with extremely robust, energy-efficient and cost-effective SONOS flash technology. The nvSRAM IP blocks come with unlimited and fast (20ns) read and write operation and a standard SRAM interface. A full parallel data backup up to 125Mb/s guarantees fast store operation. Because the energy for storage is gathered during the normal operation cycle, no additional customer control circuitry is needed; also, the device’s compact design and small silicon footprint hold down device costs. Anvo’s memory even survives γ-ray sterilization.
The nvSRAM is being marketed to applications requiring high reliability and security: medical, communication, automotive, bio-technology, and industrial control and metering.