Memory capacity trend of emerging nonvolatile memories will be discussed by Kevin Zhang of Intel in Oregon.
Subcommittee chair Kevin Zhang of Intel will be discussing trends in memory in 2013. According to Zhang, we continue to see progressive scaling in embedded SRAM, DRAM, and floating-gate based Flash for very broad applications. However, due to the major scaling challenges in all mainstream memory technologies, we see a continued increase in the use of smart algorithms and error-correction techniques to compensate for increased device variability. Read more.