imec, PVA Tepla demo 3D TSV void detection

January 24, 2012 – Imec and PVA Tepla say they have achieved void detection in through-silicon vias at wafer level, after TSV copper plating, thanks to a nondestructive high-frequency scanning acoustic microscopy (SAM) technique. The method also can be applied to detect voids in TSVs during processing, they claim.

The initial focus of their work was to develop metrology for detecting voids after temporary wafer bonding of 3D wafers, which remains challenging because development of interface particles and voids can impact subsequent wafer thinning processes, as well as overall wafer thinning and tool performance.

To address this, PVA Tepla and imec developed an automated foup-to-foup, wafer-level process based on 200MHz SAM using Tepla

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