DNP and Luminescent Technologies achieve milestone in development of metrology and inspection program

Luminescent Technologies Inc., a provider of computational metrology and inspection solutions for the global semiconductor manufacturing industry, and Dai Nippon Printing Company, Ltd. announced today the successful completion of the first phase of a three-year joint development program for computational metrology and inspection using Luminescent’s Automated Image Processing Hub (LAIPH) platform.  The goals of the collaboration are to dramatically reduce photomask defect review and analysis cycle time while simultaneously improving overall mask quality. The first phase resulted in the successful implementation of LAIPH Aerial Image Analyzer (AIA) software in DNP’s Kami-Fukuoka photomask production plant.

“Today’s advanced design technologies for semiconductors require sophisticated software to enable quick and accurate disposition of reticle defects for state-of-the-art lithography tools,” said Mr. Hideyoshi Takamizawa, deputy general manager of Photomask Technical Department, 1st Production Division, Fine Electronics Business Operationsof DNP.  “We are impressed with results obtained from Luminescent’s AIA software and look forward to extending the use of the LAIPH platform for further applications.”

"We are proud DNP has chosen Luminescent to assist with their world class performance in mask cycle time and quality," added Dr. Linyong (Leo) Pang, Sr. Vice President of Luminescent.  “Our contribution to DNP’s manufacturing success is further proof of the power of computational methods in defect metrology and inspection.”

Aerial Image Analyzer (AIA) is one of the applications on Luminescent’s LAIPH platform to address the growing challenges of inspection in advanced mask shops and wafer fabs. It provides precise quantitative analysis of defect images captured by Carl Zeiss SMT’s Aerial Image Measurement System (AIMSTM) and Applied Materials AeraTM series mask inspection systems. AIA automatically dispositions the defect based on its simulated wafer contour, CD, and location. It improves the equipment’s utilization while offering 100X faster, more comprehensive and consistent analysis than operator’s manual measurements.


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