Nitronex, a designer and manufacturer of gallium nitride (GaN) based RF solutions for high performance applications, has named David W. Runton as its new Vice President of Engineering. Runton has almost 20 years of RF power semiconductor experience with six years in GaN specific product development, including design, assembly, qualification and packaging.
“I’m looking forward to working with the engineering team to develop many new successful GaN products. Nitronex has very compelling technology that I feel has advantages for numerous market applications,” said Runton. “I am joining Nitronex at an exciting time with a new owner, management team, and significant growth plans for the future.”
Runton most recently served as director of High Power Engineering for RFMD, where he led an engineering product release team and developed long term product strategy. He has also held engineering leadership positions at Freescale and Motorola Semiconductor.
“David is an excellent addition to our management team and I’m confident he will help us leverage our core technology in the RF power market. He has an extensive background developing LDMOS and GaN power devices and a proven track record leading engineering teams to develop new products and technologies,” said Greg Baker, President and CEO.
Runton holds both a Bachelor Degree and a Master of Science degree in Electrical Engineering from the Georgia Institute of Technology as well as a Masters in Business Administration, High Technology Program from Arizona State University.