Resistive RAM (ReRAM) is a promising candidate for future nonvolatile memory applications. Researchers from Micron Technology will describe a 16Gb nonvolatile copper-filament ReRAM chip fabricated at the 27nm node, with a cell size of 6F2. The chip achieved superb write/read speeds of 133MB/s and 666MB/s, respectively. While individual high-density ReRAM cells have been shown previously, this is the first integrated circuit to demonstrate the successful integration of various elements needed for mass production of high-density ReRAM chips: a one transistor/one cell architecture, a highly modified random access device and novel self-aligned contacts (no lithography required).

In the illustrations above, (a) is a schematic of the device structure; (b) is a 3D perspective showing the epitaxial array used for planarity; and (c) shows completed 27nm access devices.

(Paper #6.2, “Process Integration of a 27nm, 16Gb Cu ReRAM,” J. Zahurak et al, Micron Technology) 

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