Yearly Archives: 2015

SEMI projects that worldwide sales of new semiconductor manufacturing equipment will decrease 0.6 percent to $37.3 billion in 2015, according to the SEMI Year-end Forecast, released today at the annual SEMICON Japan exposition.  In 2016, nominal positive growth is expected, resulting in a global market increase of 1.4 percent.

The SEMI Year-end Forecast predicts that wafer processing equipment, the largest product segment by dollar value, is anticipated to increase 0.7 percent in 2015 to total $29.5 billion. The “Other Front End” category (fab facilities, mask/reticle, and wafer manufacturing equipment) is expected to increase 20.6 percent in 2015. The forecast predicts that the market for assembly and packaging equipment will decrease by 16.4 percent to $2.6 billion in 2015 and that the market for semiconductor test equipment is forecast to decrease by 7.4 percent, totaling $3.3 billion this year.

For 2015, Taiwan, South Korea, North America, remain the largest spending regions, with investments in Japan approaching North American levels.  SEMI forecasts that in 2016, equipment sales in Europe will climb to $3.4 billion (63.1 percent increase over 2015). After a 13 percent contraction for Europe in 2015, GLOBALFOUNDRIES, Infineon, Intel, and STMicroelectronics are all expected to significantly accelerate fab equipment spending in 2016, resulting in strong growth in the region in 2016.  In Rest of World, essentially Southeast Asia, sales will reach $2.5 billion (25.7 percent increase), the China market will total $5.3 billion (9.1 percent increase), and North America equipment spending will reach $5.9 billion (6.1 percent increase). The equipment markets in Japan, Korea, and Taiwan are expected to contract in 2016.

The following results are given in terms of market size in billions of U.S. dollars:

Year_End_image_600px

The Equipment Market Data Subscription (EMDS) from SEMI provides comprehensive market data for the global semiconductor equipment market. A subscription includes three reports: the monthly SEMI Book-to-Bill Report, which offers an early perspective of the trends in the equipment market; the monthly Worldwide Semiconductor Equipment Market Statistics (SEMS), a detailed report of semiconductor equipment bookings and billings for seven regions and over 22 market segments; and the SEMI Year-end Forecast, which provides an outlook for the semiconductor equipment market.

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches — with applications spanning nearly all electronics products and electricity distribution infrastructures.

Power semiconductor devices are a critical part of the energy infrastructure — all electronics rely on them to control or convert electrical energy. Silicon-based semiconductors are rapidly approaching their performance limits within electronics, so materials such as GaN are being explored as potential replacements that may render silicon switches obsolete.

But along with having many desirable features as a material, GaN is notorious for its defects and reliability issues. So the team zeroed in on devices based on GaN with record-low defect concentrations to probe GaN’s ultimate performance limits for power electronics. They describe their results in a paper in the journal Applied Physics Letters, from AIP Publishing.

“Our engineering goal is to develop inexpensive, reliable, high-efficiency switches to condition electricity — from where it’s generated to where it’s consumed within electric power systems — to replace generations-old, bulky, and inefficient technologies,” said Zongyang Hu, a postdoc working in Professor Grace Huili Xing’s research group within the School of Electrical and Computer Engineering at Cornell University. “GaN-based power devices are enabling technologies to achieve this goal.”

The team examined semiconductor p-n junctions, made by joining p-type (free holes) and n-type (free electrons) semiconductor materials, which have direct applications in solar cells, light-emitting diodes (LEDs), rectifiers in circuits, and numerous variations in more complex devices such as power transistors. “For our work, high-voltage p-n junction diodes are used to probe the material properties of GaN,” Hu explained.

To describe how much the device’s current-voltage characteristics deviate from the ideal case in a defect-free semiconductor system, the team uses a “diode ideality factor.” This is “an extremely sensitive indicator of the bulk defects, interface and surface defects, and resistance of the device,” he added.

Defects exist within all materials, but at varying levels. “So one parameter we used to effectively describe the defect level in a material is the Shockley-Read-Hall (SRH) recombination lifetime,” Hu said.

SRH lifetime is the averaged time it takes injected electrons and holes in the junction to move around before recombining at defects. “The lower the defect level, the longer the SRH lifetime,” Hu explained. “It’s also interesting to note that for GaN, a longer SRH lifetime results in a brighter light emission produced by the diode.”

The work is significant because many researchers around the globe are working to find ways to make GaN materials reliable for use within future electronics. Due to the presence of defects with high concentrations in typical GaN materials today, GaN-based devices often operate at a fraction of what GaN is truly capable of.

It’s worth noting that, in 2014, a Nobel Prize in physics was awarded to three scientists for making seminal and breakthrough contributions to the field of GaN-based LEDs. Though operating at compromised conditions, GaN LEDs are helping to shift the global lighting industry to a much more energy-efficient, solid-state lighting era.

The work led by Xing at Cornell University is the first report of GaN p-n diodes with near-ideal performance in all aspects simultaneously: a unity ideality factor, avalanche breakdown voltage, and about a two-fold improvement in device figure-of-merits over previous records.

“Our results are an important step toward understanding the intrinsic properties and the true potential of GaN,” Hu noted. “And these achievements are only possible in high-quality GaN device structures (an effort led by IQE engineers) prepared on high-quality GaN bulk substrates and with precisely tuned fabrication technologies (an effort led by Dr. Kazuki Nomoto, a research associate at Cornell University).”

One big surprise for the team came in the form of unexpectedly low differential-on-resistance of the GaN diode. “It’s as if the body of the entire p-n diode is transparent to the current flow without resistance,” he said. “We believe this is due to high-level injection of minority carriers and their long lifetime, and are exploring it further.”

The team’s work is part of the U.S. Department of Energy’s (DOE) Advanced Research Projects Agency-Energy (ARPA-E) “SWITCHES” program, monitored by Dr. Timothy Heidel. “Leading one of these projects, we at Cornell, in collaboration with our industrial partners IQE, Qorvo, and UTRC, have established an integrated plan to develop three terminal GaN power transistors, package them, and insert them into circuits and products,” Xing said.

Beyond the DOE ARPA-E project, the team is open to collaboration with any researchers or companies interested in helping drive GaN power electronics to its fruition.

Applied Materials, Inc. today announced that Dr. Chorng-Ping Chang, who leads the company’s strategic external research with universities and industry consortia, has been named a 2016 IEEE Fellow. Dr. Chang is being recognized for his contributions to “replacement gate and shallow trench isolation for CMOS technology,” which have had a profound impact on the advancement of integrated circuit (IC) fabrication. The IEEE Grade of Fellow is conferred by the IEEE Board of Directors upon a person with an outstanding record of accomplishments in any of the IEEE fields of interest. IEEE Fellow is the highest grade of membership and is recognized by the technical community as a prestigious honor and an important career achievement. The total number selected in any one year cannot exceed one-tenth of one-percent of the total voting membership.

“Chorng-Ping’s brilliant work helped the industry adopt novel methods in CMOS scaling and made important contributions to the performance, functionality and size of the electronic products we use every day,” said Dr. Om Nalamasu, senior vice president and CTO of Applied Materials. “I commend him on this well-deserved honor and for his efforts leading Applied Materials’ collaborations with universities and consortia.”  

Dr. Chang’s outstanding technical contributions and extensive semiconductor industry community service span nearly three decades. While working at Bell Laboratories he led pioneering research that helped the industry through one of the most significant transitions in the history of CMOS technology – the shift from the gate-first to the gate-last (replacement gate) process. His work on extending the use of replacement gate technology continued at Applied Materials, and today virtually all state-of-the-art CMOS logic devices, including FinFET transistors, use replacement gate technology. In addition, early on in his career Dr. Chang made pivotal contributions in deposition, etching and advanced plasma processing technologies.

Another critical area where Dr. Chang made significant contributions is advanced shallow trench isolation (STI). He led an early detailed study that demonstrated how changing the shape of the top trench corners helped resolve serious issues of defect density, junction leakage and device threshold voltage control. This research had a long-term impact on the robustness and extendibility of STI in mainstream CMOS manufacturing, to the extent that major CMOS process technologies introduced in recent years have used STI corner engineering techniques developed by Dr. Chang and his team.

Dr. Chang has served the IEEE community in several facets throughout his career, including as editor of IEEE Electron Device Letters for 12 years. He has also been a member of the program committees of various international technical conferences on IC technology, and is currently the U.S. Chair of the International Technology Roadmap for Semiconductors (ITRS) Process, Integration, Devices and Structures Chapter. Dr. Chang holds a bachelor’s degree from National Tsing Hua University and a Ph.D. in engineering from the University of California, Berkeley.

CEA-Leti, an applied-research institute for microelectronics, will demonstrate at CES 2016 three disruptive innovations, ranging from ultra-high-brightness, augmented-reality glasses to extremely high-speed wireless data transmission between mobile devices, and the world’s first TV white-space modem limiting interference in adjacent spectrum bands.

The three demonstrations at Eureka Park in the Sands hotel mark Leti’s first formal participation at CES, and reflect the institute’s growing focus on applied technologies for consumer market solutions.

The demonstrators include:

  • DiamonDisplay,the world’s brightest augmented-reality display with the first demonstrator of a high-density micro-LED array that is scalable to a standard microelectronic large-scale fabrication process. This micro-LED display provides brightness that is 100 to 1,000 times higher than current micro displays, enables very high definition, very sharp contrast in daylight and is ideal for compact, lighter products that consume less power.
  • G-Link, a low-power, wireless connection that enables ultra-high-speed transfer of gigabits of data between two devices a few centimeters apart. For consumers it provides a wireless connection between two mobile devices to share, for example, HD videos, between a movie camera and a video display, or between a kiosk and a tablet to download HD videos, etc. G-Link uses a very compact and low-cost package, integrating the entire system, including antennas.  The second generation will be available in 2016 and will provide increased data rate (5Gbps) at lower power consumption (50mW).
  • TV White Space modem, the world’s first wide-area, wireless technology based on the IEEE 1900.7 standard, providinghigh-speed Internet service over long-distances from just one access point. Leti’s demonstration shows a new wireless-network solution that uses adjacent spectrum bands to provide broad coverage indoors and out: up to 64km range in open spaces. The technology can help reduce the digital divide by providing broadband access in underserved rural areas.

“Leti is well known in the industry as a strategic partner for companies that come to us to help them apply tomorrow’s microelectronic technologies in their products, ranging from consumer markets to biotech, security, transportation and the Internet of Things,” said Leti CEO Marie Semeria. “But we also encourage our teams to imagine how our expertise can enhance consumers’ quality of like. This focus on innovation is a pillar of Leti’s successful startup program, and these demonstrators provide a sample of the results.”

Three recent Leti startups also will demonstrate technologies at Eureka Park:

  • Aryballe Technologies will show the diversity of its biochemical sensors in a universal detector able to identify several thousand odors listed in olfactory-signature databases. Its first product is a portable odor-detection device, Neosmia, for people with smell disorders. Booth # 81234.
  • eLichens develops services and miniaturized sensors for consumers and professionals to detect, monitor and predict air quality. The sensors continuously measure the CO, CO2 or CH4 values in local ambient air. Booth # 81233.
  • The AirBoard is an Arduino-compatible, wireless, open-source computer for rapidly prototyping smart connected objects for the Internet of Things. Booth # 81232.

Leti has launched more than 50 startups over the years. These include Movea, the motion-sensing company that was acquired by InvenSense; iskn, a digitized sketching-tool provider, and BeSpoon, whose tracking chips use cell phones to locate within a few centimeters common items such as keys, even from hundreds of meters away.

BeSpoon and EnerBee, a Leti startup that specializes in motion-based energy harvesting, also will exhibit in Eureka Park.

Leti will be part of the French Tech delegation at CES and will be one of 34 participants in Minalogic’s first joint collective mission of the new region Auvergne Rhône-Alpes.

Leti’s team will be available to discuss the demonstrators and provide more information on the institute and its startup program at booth # 81333 in Eureka Park.

SEMICON Japan 2015, an exhibition in Asia for semiconductor manufacturing and related processing technology, opens tomorrow at Tokyo Big Sight. The exposition and conference offers the latest in technology and innovations for the microelectronics industry, including emerging opportunities in the new World of IoT (Internet of Things). SEMICON Japan (December 16-18) registration is now open for both the exhibition and conference programs.

Japan is uniquely positioned to support the IoT revolution with its large 200mm fab capacity, diverse product mix and leadership in markets such as MCUs, automotive, power devices, sensors and LEDs. SEMICON Japan 2015 connects the players and companies enabling the world of IoT by facilitating communications and partnerships across the microelectronics industry.

Highlights at SEMICON Japan include:

  • The SuperTHEATER at Tokyo Big Sight will offer the Opening Ceremony at 9:40 a.m. Wednesday, and nine forums in three days featuring speakers from: Amazon, Cisco Systems, Fujitsu, Google,Hitachi, IBM, Intel, KLA-Tencor, Micron Technology, Microsoft, Nissan Motors, Rakuten, Renesas Electronics, Sony, Tata Consultancy Services, Toshiba, TSMC, and more.
  • Held in conjunction with SEMICON Japan, WORLD OF IOT, a “show-within-a-show”, offers a platform where semiconductor manufacturing technology intersects with IoT applications. The 65 exhibitors include Amazon Web Services, Dassault Systems, Fujitsu, Hitachi, IBM Research-Tokyo, Intel, Siemens, Tesla Motors, Toshiba Healthcare, Toyota Motors, and more.
  • Two theme pavilions – Sustainable Manufacturing Pavilion, providing solutions focused on sustainability for 200mm technologies, and Manufacturing Innovation Pavilion, showcasing innovations for developing higher performing, faster and lower-cost semiconductor devices – are adjacent in East Hall 1.
  • Showcasing startup pitch presentations and exhibits from early-stage companies, the INNOVATION VILLAGE connects 13 emerging companies with investors and prospective technology partners.

Osamu Nakamura, president of SEMI Japan, said “With the building momentum from the IoT revolution, the Japan semiconductor industry is poised to take advantage of growth within the Japan supply chain. I welcome all of you from the global semiconductor industry to learn about the innovations that will support this growth as you visit the exhibition and participate in the conferences at SEMICON Japan.”

For more information on SEMICON Japan, visit www.semiconjapan.org/en/.

At last week’s IEEE International Electron Devices Meeting 2015, nano-electronics research center imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs. Moreover, imec optimized the epitaxial p-GaN growth process on 200mm silicon wafers, achieving e-mode devices featuring beyond state-of-the-art high threshold voltage (Vt) and high drive current (Id).

To achieve a good, current-collapse-free device operation in AlGaN/GaN-on-Silicon (Si) devices, dispersion must be kept to a minimum. Trapped charges in the buffer between the GaN-based channel and the silicon substrate are known to be a critical factor in causing dispersion. Imec compared the impact of different types of buffers on dispersion and optimized three types: a classic step-graded buffer, a buffer with low-temperature AlN interlayers, and a super lattice buffer. These three types of buffers were optimized for low dispersion, leakage and breakdown voltage over a wide temperature range and bias conditions.

Imec also optimized the epitaxial p-GaN growth process demonstrating improved electrical performance of p-GaN HEMTs, achieving a beyond state-of-the-art combination of high threshold voltage, low on-resistance and high drive current (Vt >2V, RON = 7 Ω.mm and Id >0.4A/mm at 10V). The P-GaN HEMT results outperformed their MISHEMT counterparts.

Imec’s GaN-on-Si R&D program aims at bringing this technology towards industrialization. Imec’s offering includes a complete 200mm CMOS-compatible 200V GaN process line that features excellent specs on e-mode devices. Imec’s program allows partners early access to next-generation devices and power electronics processes, equipment and technologies, and speed up innovation at shared costs. Current R&D focuses on improving the performance and reliability of imec’s e-mode devices, while in parallel pushing the boundaries of the technology through innovation in substrate technology, higher levels of integration and exploration of novel device architectures.

“Imec’s presentations at the renowned IEDM meeting last week are a testament to the capabilities, sophistication, and maturity of our 200mm GaN-on-Silicon platform,” stated Rudi Cartuyvels, executive vice president of smart systems and energy technology at imec. “Building upon this success, we are now working with our GaN partners to implement and transfer specific device customizations. in parallel, we are exploring alternative substrate technologies to further push the boundaries of the GaN technology.”

2016 bounce to modest gains


December 14, 2015

By Christian G. Dieseldorff, Industry Research & Statistics Group, SEMI

SEMI just published the latest quarterly update of its World Fab Forecast report.  While the year started with a positive outlook, the initial optimism has largely deflated, and the year will end largely flat. Fab equipment spending growth (new and used) for 2015 is expected to be 0.5 percent (US$ 35.8 billion). For 2016, spending is forecast to grow by 2.6 percent ($36.7 billion), with a possible continued upward trend.

Past trends prove again the close correlation of spending to global GDP and revenue.  The IMF predicted worldwide GDP to grow by 3.5 percent back in May, and has revised it down to only 3.1 percent.  Likewise, as of May, the year’s average revenue growth for the semiconductor industry was predicted to be in the mid- to high-single digits (according to ten leading market research firms).  Now these firms have revised their 2015 predictions to an average of just 1.3 percent.

Fab equipment spending (new, used and in-house) follows the same rollercoaster as revenue, and is now expected to grow by only 0.5 percent by the end of 2015, possibly 1 percent, according to SEMI.

Fab-Equipment-Spending

In 2015, 80 to 90 percent of fab equipment spending went to 300mm fabs, while only 10 percent was for 200mm or smaller.  SEMI’s recently published “Global 200mm Fab Outlook” provides more detail about past and future 200mm activities.

Cherish the Memory

Examining fab equipment spending by product type, Memory accounts for the largest share in 2015 and 2016. In 2015, DRAM spending was second in place but in 2016 3D Flash will, by far, outspend DRAM.

Most DRAM spending in 2015 went towards 21/20nm ramp.  In 2016, DRAM companies are expected to start risk production of 1xnm (for example, Samsung in 1H 2016; Hynix in 2H 2016; and Micron in 2016).

While 2015’s spending was dominated by DRAM, SEMI reports that 2016 will be dominated by Flash, mainly 3D-related architectures.  Capacity for 3D-NAND will continue to surge.  SEMI’s report tracks 10 major 3D producing facilities, with a capacity expansion of 47 percent in 2015 and 86 percent in 2016.

Foundry Segment Holds Steady

The Foundry segment is next in terms of the largest share of fab equipment spending in 2015 and 2016.  In general, the foundry segment shows steadier, more predictable spending patterns than other device product segments. The largest foundry player, TSMC, has a strong impact on the foundry industry.  In the second half of 2015, TSMC cut 2015 capex from $10.5 billion to $8 billion, due to a flagging market.  SEMI expects a stronger fourth quarter in 2015 for equipment spending for foundry as TSMC fulfills its capital expenditure for the year and we expect an increased capex in 2016.

TSMC recently announced revenue expectation for 2016 to be in double digits and expects to increase capex for 2016 as it ramps 16nm and adds initial 10nm capacity.

It’s Only Logical (and MPU)

Coming in third place in fab equipment spending, MPU had lower spending in 2015.  Intel revised its planned capex down four times, from $10 billion to $8.7 billion then to $7.7 billion, and finally to $7.3 billion, and it decided to delay the launch of 10nm products (Cannonlake) to 2H17.  Intel still announced lofty plans for 2016 capex, around $10 billion.  Especially in 2H16, spending will pick up for anticipated 10nm activities.

Meanwhile for Logic spending has been very strong in 2015, with 90 percent growth, driven by SONY’s CMOS image sensors.  This exuberant growth, however, is expected to slow down in 1H16.

Consequence of Consolidations: the End of Wild Times?

Between 2010 and 2014, change rates for equipment spending fluctuated wildly, from +16 percent in 2011 to -16 percent in 2012, -8 percent in 2013 to 15 percent in 2014. These drastic changes have been replaced by dampened spending growth rate for 2015 and into 2016.  Multiple reasons may apply: a more mature and lower growth industry, increased caution regarding capacity ramp, or perhaps the recent frenzy of consolidations further concentrating capex spending.  SEMI’s next quarterly publication, in February 2016, will give further insight into early indicators of 2017.  Will sedate, positive spending growth continue?

The SEMI World Fab Forecast Report in Excel format, tracks spending and capacities for 1,167 facilities across industry segments from Analog, Power, Logic, MPU, Memory, and Foundry to MEMS and LEDs facilities. It uses a bottoms-up approach methodology, providing high-level summaries and graphs and in-depth analyses of capital expenditures, capacities, technology and products by fab.  Learn more about the SEMI fab databases at: www.semi.org/MarketInfo/FabDatabase and www.youtube.com/user/SEMImktstats

The agreement for Kozarska-Dubica-based production of mono and policrystalline silicon ingots and wafers for photovoltaic cells was signed a few days ago by MegaGroup, a Italian photovoltaic Holding currently owning MegaCell, MegaEngineering and MegaCivic and soon a new Company fully dedicated to the Bosnian project.

Franco Traverso, MegaGroup’s President and Italian photovoltaic pioneer, has made it official today after last Friday’s sign with the Bosnian local administrative authority arranging the purchase of a 20.000 sq.m. area in Kozarska Dubica’s industrial district, “Lipova Greda,” where the new production plant will be built in 2016.

With an investment of 12,5 million Euros, the plant in the first phase will have 120 MW annual capacity.

90 workers will be employed after being specifically trained to work in a high technology sector.
“We aim to start the production of mono and policrystalline silicon ingots and wafers by the end of 2016 in order to provide the raw materials for cells and modules production. This is the first step towards the creation of a world photovoltaic hub,” Franco Traverso said.

The production will be mainly allocated to MegaCell, which produces high-efficiency bifacial solar cells and modules in Padua, and also to the Joint Ventures plants that the Group has been establishing abroad for the production of bifacial cells and modules and innovative bifacial solar systems.

The later phase of the project foresees a further production capacity increase and establishment of other PV Value Chain parts, with an overall investment of 35 million Euros allowing the creation of one of the largest European photovoltaic plant, carrying the Italian flag.

MegaGroup chose the Bosnian industrial site, already equipped with infrastructure, because of its favorable conditions for energy-intensive production, such as ingots and wafers one. As a matter of fact, the new plant will benefit from energy costs among the lowest in the world, high-skilled and low-cost workforce and the support from the Government. Besides, the plant will be powered with green hydroelectric energy.

“For MegaGroup it is a big step forward expansion in emerging countries” again, Traverso said. “Our target is forming a network of partner companies who will benefit from production and commercial internal synergies and could be strongly competitive on a global level. Self-production of the PV raw materials in Bosnia is a key element of a strategic planning that aims to make high-performance PV energy even more competitive with the fossil fuels energy.”

TSMC this week submitted an application to the Investment Commission of Taiwan’s Ministry of Economic Affairs for an investment project to build a wholly-owned 12-inch wafer manufacturing facility and a design service center in Nanjing, China.

The planned capacity of the facility is 20,000 12-inch wafers per month, and would be scheduled to begin volume production of 16nm process technology in the second half of 2018. The design service center is aimed at establishing TSMC’s design ecosystem in China. TSMC will commence the investment project upon receiving the approval from the Investment Commission.

‘In view of the rapid growth of the Chinese semiconductor market, we have decided to establish a 12-inch wafer fab and a design service center in China to provide closer support to our customers there and to further expand our business opportunities,’ said TSMC Chairman Dr. Morris Chang.

SEMI, the global industry association for companies that supply manufacturing technology and materials to the world’s chip makers, this week reported that worldwide semiconductor manufacturing equipment billings reached US$9.6 billion in the third quarter of 2015. The billings figure is 3 percent higher than the second quarter of 2015 and 9 percent higher than the same quarter a year ago. The data is gathered jointly with the Semiconductor Equipment Association of Japan (SEAJ) from over 100 global equipment companies that provide data on a monthly basis.

Worldwide semiconductor equipment bookings were $8.7 billion in the third quarter of 2015. The figure is 7 percent lower than the same quarter a year ago and 14 percent lower than the bookings figure for the second quarter of 2015.

The quarterly billings data by region in billions of U.S. dollars, quarter-over-quarter growth and year-over-year rates by region are as follows:

 

3Q2015

2Q2015

3Q2014

3Q15/2Q15 (Qtr-over-Qtr)

3Q15/3Q14
(Year-over-Year)
Taiwan

2.85

2.34

2.30

22%

24%
China

1.70

1.04

0.96

63%

78%
Korea

1.56

2.00

1.00

-22%

56%
Japan

1.43

1.40

1.10

2%

30%
North America

1.18

1.55

2.16

-23%

-45%
Rest of World

0.58

0.53

0.64

9%

-10%
Europe

0.34

0.52

0.66

-36%

-49%
Total

9.64

9.39

8.82

3%

9%

Source: SEMI/SEAJ December 2015; Note: Figures may not add due to rounding.

The Equipment Market Data Subscription (EMDS) from SEMI provides comprehensive market data for the global semiconductor equipment market.