Date: Thursday, April 14, 2016 at 1:00 p.m. ET
Free to attend
Length: Approximately one hour
Continued scaling and more complex device structures, including FinFETs and 3D stacking, are creating new challenges in metrology and characterization. As the industry continues to explore new patterning methods, new phenomena further challenge metrology and characterization including pitch walking, stress relaxation in multilayer fins, and new device designs. New materials continue to be explored for transistor and interconnect applications. Here, the challenges facing materials characterization highlight the issues that will face in-line metrology when these materials transition to manufacturing.
Speaker:
Alain Diebold, Interim Dean, College of Nanoscale Sciences
Alain Diebold is Interim Dean at the College of Nanoscale Sciences. He is also the Director of the SRC NRI INDEX Center. He is a fellow of the American Vacuum Society and SPIE as well as a senior member of the IEEE. He is an associate editor for IEEE’s Transactions on Semiconductor Manufacturing. Before moving to Albany, Alain was a Senior Fellow at SEMATECH. Prior to moving to Austin, He was a senior chemist at Allied Signal in Morristown, NJ. Alain received his PhD from Purdue University in 1979.
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