Fujitsu Semiconductor Limited and Mie Fujitsu Semiconductor Limited today announced that they have reached an agreement with US-based Nantero, Inc. to license that company’s technology for NRAM, non-volatile RAM using carbon nanotubes, and to conduct joint development towards releasing a product based on 55nm process technology.

Three companies are aiming to develop a product using NRAM non-volatile RAM that achieves several 1000 times faster rewrites and many thousands of times more rewrite cycles than embedded flash memory, making it potentially capable of replacing DRAM with non-volatile memory. Fujitsu Semiconductor plans to develop an NRAM-embedded custom LSI product by the end of 2018, with the goal of expanding the product line-up into stand-alone NRAM product after that. Mie Fujitsu Semiconductor, which is a pure-play foundry, plans to offer NRAM-based technology to its foundry customers.

“Non-volatile memory using Nantero’s carbon-nanotube technology is a marked advance beyond conventional technology,” said Masato Matsumiya, System Memory VP, Fujitsu Semiconductor. “Fujitsu Semiconductor has been designing and producing FRAM, a type of non-volatile RAM, since the late 90s, and is one of the few companies to have integrated FRAM design and production capabilities. We will be able to build on our experience and skill in this field to develop and produce NRAM as well. The combination of Nantero’s technology with our design and production capabilities promises to meet the longstanding needs of our customers for non-volatile memory that is higher density, faster, more energy efficiency, and with a higher rewrite cycle.”