Yearly Archives: 2017

Last year at Arm TechCon, SoftBank Chairman and President Masayoshi Son laid out an ambitious vision of a trillion connected devices. It’s a vision ARM is aggressively pursuing by working with their ecosystem to invisibly enable those trillion devices to connect securely.

Connecting a trillion devices is no easy task of course but doing it securely is key. Especially when the tools and techniques used by attackers are rapidly evolving to go after every piece of system hardware from foundational SoCs to peripheral components. All are seen as an opportunity to access privileged data. With daily occurrences of cyber-attacks, it’s clear security across the entire device needs to be considered at the design stage, not as an afterthought.

At the SoC level, there are many classes of threats including those where attackers try to take advantage of the physical characteristics of the silicon implementation manifested during algorithmic execution. Today, ARM is announcing the availability of highly-efficient on-die threat mitigation technology designed to protect against threats including:

  • Simple and Differential Power Analysis (SPA/DPA), where an attacker is trying to compromise confidential information (e.g. a secret cryptographic key) through various analysis methods of the power consumed by an integrated circuit (IC) during operation
  • Simple and Differential Electromagnetic Analysis (SEMA/DEMA), where an attacker is trying to compromise confidential information (e.g. a secret cryptographic key) through various analysis methods of the electromagnetic field created during IC operation

The power and electromagnetic analysis mitigation technology relieves designers of the need to worry about this category of non-invasive attacks, while providing a solution that is easily scalable to cover changes in the protected logic. The resulting system benefit is addressing the leakage source directly and preventing sensitive data leakage through the IC power consumption and electromagnetic emission. From an implementation perspective, the mitigation technology is applicable across the full spectrum of silicon processes used in the semiconductor industry.

Trust between connected devices and their users is a critical factor in the continued growth of the IoT, particularly in applications making use of highly sensitive data, such as autonomous vehicles, mobile payment systems and connected health. Adding this technology to our security IP portfolio will enable the deployment of more secure devices as we drive toward our vision of a truly connected world.

To learn more about ARM security solutions, attend the security track at Arm TechCon, (Oct. 24-26 in Santa Clara, CA.)

Scientists at the University of Sussex may have found a solution to the long-standing problem of brittle smart phone screens.

Professor Alan Dalton and his team have developed a new way to make smart phone touch screens that are cheaper, less brittle, and more environmentally friendly. On top of that, the new approach also promises devices that use less energy, are more responsive, and do not tarnish in the air.

Dr. Matthew Large, University of Sussex, flexes a screen made from acrylic plastic coated in silver nanowires and grapheme to illustrate the kind of touch screens that can potentially be produced using the new approach Credit: Dr. Matthew Large

Dr. Matthew Large, University of Sussex, flexes a screen made from acrylic plastic coated in silver nanowires and grapheme to illustrate the kind of touch screens that can potentially be produced using the new approach Credit: Dr. Matthew Large

The problem has been that indium tin oxide, which is currently used to make smart phone screens, is brittle and expensive. The primary constituent, indium, is also a rare metal and is ecologically damaging to extract. Silver, which has been shown to be the best alternative to indium tin oxide, is also expensive. The breakthrough from physicists at the University of Sussex has been to combine silver nanowires with graphene – a two dimensional carbon material. The new hybrid material matches the performance of the existing technologies at a fraction of the cost.

In particular, the way in which these materials are assembled is new. Graphene is a single layer of atoms, and can float on water. By creating a stamp – a bit like a potato stamp a child might make – the scientists can pick up the layer of atoms and lay it on top of the silver nanowire film in a pattern. The stamp itself is made from poly(dimethyl siloxane); the same kind of silicone rubber used in kitchen utensils and medical implants.

Professor Alan Dalton from the school of Maths and Physical Science at the University of Sussex, says:

“While silver nanowires have been used in touch screens before, no one has tried to combine them with graphene. What’s exciting about what we’re doing is the way we put the graphene layer down. We float the graphene particles on the surface of water, then pick them up with a rubber stamp, a bit like a potato stamp, and lay it on top of the silver nanowire film in whatever pattern we like. “And this breakthrough technique is inherently scalable. It would be relatively simple to combine silver nanowires and graphene in this way on a large scale using spraying machines and patterned rollers. This means that brittle mobile phone screens might soon be a thing of the past.

“The addition of graphene to the silver nanowire network also increases its ability to conduct electricity by around a factor of ten thousand. This means we can use a fraction of the amount of silver to get the same, or better, performance. As a result screens will be more responsive and use less power.”

Dr Matthew Large, lead researcher on the project within the school of Maths and Physical Science at the University of Sussex, says:

“Although silver is also a rare metal, like indium, the amount we need to coat a given area is very small when combined with graphene. Since graphene is produced from natural graphite – which is relatively abundant – the cost for making a touch sensor drops dramatically.

“One of the issues with using silver is that it tarnishes in air. What we’ve found is that the graphene layer prevents this from happening by stopping contaminants in the air from attacking the silver. “What we’ve also seen is that when we bend the hybrid films repeatedly the electrical properties don’t change, whereas you see a drift in the films without graphene that people have developed previously. This paves the way towards one day developing completely flexible devices.”

Piezoelectric materials are used for applications ranging from the spark igniter in barbeque grills to the transducers needed by medical ultrasound imaging. Thin-film piezoelectrics, with dimensions on the scale of micrometers or smaller, offer potential for new applications where smaller dimensions or a lower voltage operation are required.

Researchers at Pennsylvania State University have demonstrated a new technique for making piezoelectric microelectromechanical systems (MEMS) by connecting a sample of lead zirconate titanate (PZT) piezoelectric thin films to flexible polymer substrates. Doctoral candidate Tianning Liu and her co-authors report their results this week in the Journal of Applied Physics, from AIP Publishing.

Electroded thin-film PZT on a flexible polyimide substrate of relatively large area. Credit: Tianning Liu

Electroded thin-film PZT on a flexible polyimide substrate of relatively large area. Credit: Tianning Liu

“There’s a rich history of work on piezoelectric thin films, but films on rigid substrates have limitations that come from the substrate,” said Thomas N. Jackson, a professor at Penn State and one of the paper’s authors. “This work opens up new areas for thin-film piezoelectrics that reduce the dependence on the substrate.”

The researchers grew polycrystalline PZT thin films on a silicon substrate with a zinc oxide release layer, to which they added a thin layer of polyimide. They then used acetic acid to etch away the zinc oxide, releasing the 1-micrometer thick PZT film with the polyimide layer from the silicon substrate. The PZT film on polyimide is flexible while possessing enhanced material properties compared to the films grown on rigid substrates.

Piezoelectric devices rely on the ability of some substances like PZT to generate electric charges when physically deformed, or inversely to deform when an electric field is applied to them. Growing high-quality PZT films, however, typically requires temperatures in excess of 650 degrees Celsius, almost 300 degrees hotter than what polyimide is able to withstand without degrading.

Most current piezoelectric device applications use bulk materials, which hampers miniaturization, precludes significant flexibility, and necessitates high-voltage operation.

“For example, if you’re looking at putting an ultrasound transducer in a catheter, a PZT film on a polymer substrate would allow you to wrap the transducer around the circumference of the catheter,” Liu said. “This could allow for significant miniaturization, and should provide more information for the clinician.”

The performance of many piezoelectric thin films has been limited by substrate clamping, a phenomenon in which the rigid substrate constrains the movement of the piezoelectric material’s domain walls and degrades its properties. Some work has been done crystallizing PZT at temperatures that are compatible with polymeric materials, for example using laser crystallization, but results thus far have led to porous thin films and inferior material properties.

The released thin films on polyimide that the researchers developed had a 45 percent increase in remanent polarization over silicon substrate controls, indicating a substantial mitigation in substrate clamping and improved performance. Even then, Liu said, much work remains before thin-film MEMS devices can compete with bulk piezoelectric systems.

“There’s still a big gap between putting PZT on thin film and bulk,” she said. “It’s not as big as between bulk and substrate, but there are also things like more defects that contribute to the lower response of the thin-film materials.”

Today, SEMI announced that SEMICON Japan, the exposition for the electronics manufacturing supply chain in Japan, will focus on smart applications as key drivers of the electronics industry. Over 30,000 attendees are expected to convene at SEMICON Japan at Tokyo Big Sight in Tokyo on December 13-15. Registration for the exhibition and programs is now open.

Both on the exhibition floors and in sessions, smart applications will be featured, including Smart Automotive, Smart Manufacturing, Smart MedTech and the Internet of Things (IoT), bringing the theme, “Dreams Start Here” to life.

Smart Automotive – On the show floor, Toyota and Tesla will share new Smart Automotive technologies. Two dedicated forums on Smart Automotive will be featured at SEMICON Japan:

  • IoT Key Technology Forum: Companies, including Nissan Motors, NVIDIA andHitachi Automotive Systems will share their perspectives on the future of Smart Automotive.
  • Smart Mobility Forum: The technologies shaping our future mobile society, including autonomous bus systems, robot cars and drones, are featured.

Smart Manufacturing – The Smart Manufacturing Forum will share the latest on advanced  manufacturing lines from two Japanese solution providers ─ Fuji Machine Manufacturing and Yokogawa Electric. On the exhibition floor, Peer Group, Siemens and Yokogawa Electric will showcase the technologies and products.

Smart MedTech – The Smart Healthcare Forum will feature the Internet Association Japan and Hitachi who will explore the development of medical electronics and the latest technologies and solutions brought by IoT and AI. On the show floor, companies providing key enabling technologies for wearable devices including JINS, Toyobo and YUASA Systems will exhibit in the Flexible Hybrid Electronics area.

WORLD OF IOT – Many of the above exhibits on smart applications and their enabling technologies will be located at the WORLD OF IOT, a technology showcase highlighting the companies, products, technologies, and applications enabling the IoT revolution. WORLD OF IOT will have more than 70 exhibitors including Fujitsu, Hitachi, IBM, Micron, Nokia, Panasonic, Soft Bank and Sony. SEMICON Japan also features two sessions on IoT technologies:

  • IoT Global Trends Forum: Executives from leading technology companies, including Arm, Intel and Sony, will discuss the technology development needed to reach a smarter and more connected world.
  • IoT Connectivity Forum: Presentations by wireless communication technology companies Ericsson and NTT Docomo on next-generation technology including 5G and LPWA, needed to accelerate the Industrial IoT and Smart Manufacturing.

 

All about Drones – SEMICON Japan will also present “All about Drones”─a spotlight on drones, a growing application of sensor and actuator technologies. A tear-down drone exhibit, drone lectures, and a demonstration area will allow visitors fly drones.

Osamu Nakamura, president of SEMI Japan said, “With all these exhibits and sessions, the semiconductor manufacturing supply chain will intersect with the growing application markets, technologies and players to find new opportunities for collaboration, innovation and growth. That’s why ‘Dreams Start Here’ at SEMICON Japan.”

For more information on the SEMICON Japan exposition and programs, visit http://www.semiconjapan.org/en.

“The GaN market promises an imminent growth”, announced Dr. Ana Villamor, Technology & Market Analyst from Yole Développement (Yole). “2015 and 2016 have been undoubtedly exciting years for the GaN power business. We project the explosion of the market with 84% CAGR between 2017 and 2022. The market value will so reach US$ 450 million at the end of the period.” What makes the power GaN technology so promising?

The “More than Moore” market research and strategy consulting company Yole pursued its investigations based on numerous exchanges with power GaN companies and thanks to its participation to leading conferences. Yole announces this month the Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends report. Things are going on the right way: the power GaN supply chain prepares for production and 2017 has been showing significant investments that confirm the added-value of power GaN technology and its strong potential in numerous applications. The new Power GaN analysis conveys Yole’s understanding of GaN implementation and details the different market segments, the related drivers, metrics and technical roadmaps.

In 2016 the power GaN market reached US$ 12 million: it is still a small market compared to the impressive US$ 30 billion silicon power semiconductor market. However its expected growth in the short term is showing the enormous potential of the power GaN technology based on its suitability for high performance and high frequency solutions.

“LiDAR, wireless power and envelope tracking are high-end low/medium voltage applications, and GaN is the only existing technology able to meet their requirements,” explained Ana Villamor from Yole. “Beginning of the year, Velodyne Lidar opened a ‘megafactory’ to ramp up the latest 3D sensor for LiDAR manufacturing and this October they already announced a fourfold production increase.”
Other major companies, like Apple and Starbucks, started offering wireless charging solutions. Moreover, since 2016, EPC has been working with Taiwan’s JJPlus Corporation to accelerate the wireless charging market’s growth. The power supply segment is still the biggest application for GaN. The data center market is adopting GaN solutions with a phenomenal speed, driving a 114% CAGR for power supplies through to 2022. Existing solutions from Texas Instruments and EPC for data centers, consisting of a DC/DC converter and point of load supply that steps down the voltage from 48 V to 1.2 V in a single chip, will propel the market. AC/DC power adapters for laptops or smartphones can be also implemented with GaN power IC solutions, which further reduces the size and cost of the system.

Therefore the consumer market is expected to grow during coming years and Yole’s analysts envisage two different scenarios, depending on the acceptance in key markets like AC/DC adapters for laptops and cellphones.

GaN needs to hurry to gain adoption in the EV/HEV market because SiC MOSFETs are already replacing silicon IGBTs in the main inverters. However, a future market for the 48 V battery’s DC/DC converter is still possible for GaN due to its high-speed switching capability. Some main players, as Transphorm, have already obtained qualification for automotive, and this would help to finally ramp-up GaN production for EV/HEV.

In parallel, the GaN power devices supply chain is acting to support market growth. Therefore it is close to being settle for the power GaN market and deals during 2017 show confidence that GaN will be a successful market. “First of all, there have been big investments from the main foundries to increase their capacity to handle mass production”, asserted Zhen Zong, Technology & Market Analyst at Yole Développement. And he added: “Navitas just announced the partnership with TSMC and Amkor to ramp production capacity. Moreover, BMW i Ventures has just invested in GaN Systems. The Taiwan’s Ministry of Economic Affairs is also interested in using GaN for clean and green technologies, also in collaboration with GaN Systems.”

GaN manufacturers clearly continue developing new products and provide samples to customers, as is the case with EPC and its wireless charging line. For example, during 2017, Panasonic announced the mass production of its 650 V products and Exagan successfully produced its first high voltage devices on 8-inch wafers. Other players are in the final phase of R&D or qualification for their GaN products to be launched in 2018. In both cases, manufacturers and clients are pushing to use GaN HEMTs in emerging technologies.

Synopsys, Inc. (NASDAQ: SNPS) today announced that SiFive, the first fabless provider of customized, open-source-enabled semiconductors, has selected the Synopsys Verification Continuum platform as its verification solution. SiFive has deployed the Verification Continuum platform for simulation, verification IP, debug, static verification and formal coverage closure. Synopsys’ leadership position in these critical verification technology areas, combined with native integrations among these products, has enabled SiFive to meet aggressive goals for scalable verification of customized RISC-V processors and SoCs targeted for internet of things (IoT), edge computing, machine learning, storage and other applications.

“SiFive was founded by the creators of the free and open RISC-V architecture with an innovative approach that brings the power of open source, agile hardware design and verification to the semiconductor industry,” said Renxin Xia, vice president of engineering at SiFive. “In Synopsys, we found an innovative partner with leading verification technologies that provide our team with the productivity and flexibility required to deliver our customized processor IP and silicon solutions.”

With the exponential growth of verification complexity, achieving verification closure requires a broad set of technologies including advanced simulation, verification IP, advanced debug, static and formal verification, low-power verification and coverage closure. To address this substantial complexity, Synopsys continues to have the largest R&D investment in verification spanning the entire verification flow. This includes industry-leading VCS® simulation, VC verification IP, Verdi® advanced debug, SpyGlass® RTL signoff solutions as well as next-generation VC Formal™verification solutions. The native integration of these solutions further enables design teams to achieve faster performance, lower power and higher productivity for accelerated verification closure.

“Synopsys is addressing the need for faster time-to-market with our leading portfolio of verification software technologies,” said Ajay Singh, senior vice president of R&D in the Synopsys Verification Group. “Our collaboration with SiFive demonstrates the performance benefits of our Verification Continuum platform required for their RISC-V processors and custom SoCs.”

Strategy Analytics reports revenue for RF GaAs devices increased by slightly less than 1 percent in 2016. An anticipated drop in cellular revenue nearly offset gains in other market segments, but GaAs device revenue still managed to surpass $7.5 billion for the first time. “RF GaAs Device Forecast and Outlook: 2016 – 2021,” from Strategy Analytics’ Advanced Semiconductor Applications (ASA) service, forecasts that gigabit LTE and emerging 5G applications will drive GaAs device revenue past $9 billion in 2021.

“The RF GaAs device market is so dependent on cellular terminals that declining growth rates in smartphone sales has put the brakes on total revenue growth,” commented Eric Higham, Director of the Advanced Semiconductor Applications (ASA) service. “The good news for the industry is that growing adoption of gigabit LTE networks and devices, coupled with emerging 5G opportunities will restart the GaAs growth engine.”

“We are seeing new platforms and major program upgrades starting to ramp toward production and these developments will maintain the growth of GaAs device revenue in the defense sector,” noted Asif Anwar, Director of the Advanced Defense Systems (ADS) service.

The number of IC packages utilizing wafer-level packaging (WLP) will overtake flip chip shipments in 2018 and then continue growing at a compound annual growth rate of 15% (between 2014 and 2020) compared to just 5% for flip chip, according to the report entitled “Flip Chip/WLP Manufacturing and Market Analysis,” recently published by The Information Network, a New Tripoli, PA-based market research company.

“Advanced wafer-level packaging technologies hold the key to meeting future technology needs, from mobile devices to automotive applications, to those required for enabling the IoT,” noted Dr. Robert Castellano, [resident of The Information Network. “Flip chip technology is slowly replacing wire bonding for many high-performance chips, and wafer level packaging (WLP) is replacing flip chip.”

wlp device shipment

To meet the needs of thinner mobile devices, fan-out WLP (FO-WLP) enables redistribution of I/Os beyond the chip footprint, differing from Fan-in WLP in several key areas. One major advantage of FO-WLP, especially in mobile applications, is that the elimination of the substrate reduces the vertical footprint by an average of 40% compared with Fan-in WLP, enabling thinner products or making it possible to stack more components in the same form factor. The elimination of the interposer and TSVs also provides a cost reduction and eliminates concerns on the effects of TSVs on electrical behavior. The reduced path to the heat sink also helps improve thermal performance.

STMicroelectronics (NYSE: STM) has taken underwater accuracy to new heights with its latest miniature pressure sensor, which is featured in the new Samsung Gear Fit 2 Pro.

As smart watches and wearable fitness trackers permeate the fabric of everyday life, owners want to go further with their devices and track performance across extra activities like swimming. Samsung’s Gear Fit 2 Pro, the next generation of sports band, supports these trends with features like built-in GPS, continuous heart rate monitoring, and larger on-board memory to do more even when not connected to a smartphone. ST’s new waterproof pressure sensor, the LPS33HW, is part of the mix: resistant to chemicals like chlorine, bromine, and salt water, it is ideal for pool or sea swimming, and will also resist soaps or detergents used when showering or cleaning.

Wearables are only just beginning to swim, and waterproofing pressure sensors creates challenges beyond just protecting the electronics. The LPS33HW is not only the most accurate, but also helps OEMs get their products to the store-shelves more quickly by recovering sooner after the stresses of manufacturing. Other sensors can require up to seven days to regain maximum accuracy after coming off the production line, but devices containing the LPS33HW are ready for action in less than half that time. This is due to the sensor’s high-performance built-in processor and the advanced formula of its water-resistant gel filling.

“Wearable trackers enhance smart living, and can now deliver an important extra boost with the go-anywhere ruggedness aided by our water-resistant LPS33HW sensor,” said Andrea Onetti, MEMS Sensor Division General Manager, STMicroelectronics. “Samsung takes advantage of the pressure sensor’s best-in-class performance for the new Gear Fit 2 Pro range and users will appreciate both its accuracy and toughness.”

In addition to smart consumer devices like wearables, other equipment including industrial sensors and utility meters can also benefit from the robustness and high measurement accuracy of the LPS33HW. The 10bar pressure sensor can withstand being submerged up to 90 meters, and the very low RMS pressure noise of 0.008mbar allows apps like an altimeter, depth gauge, or weather monitor to deliver consistent and stable results. The sensor accuracy drifts by less than ±1mbar per year.

When soldered to a circuit board during product manufacture, the accuracy is affected by less than ±2mbar, and returns to normal after less than 72 hours – significantly quicker than similar water-resistant pressure sensors.

The LPS33HW is in production now, in a 3.3mm x 3.3mm x 2.9mm cylindrical metal package suitable for use with O-ring seals, priced from $4.50 for orders of 1000 pieces.

Seoul Semiconductor, a developer of LED products and technology recently introduced its Horticultural Series LEDs in COB, mid-power, and high-power packages, making Seoul the only LED manufacturer to provide lighting designers with the complete spectrum of light used for growing plants – spanning the spectrum from ultraviolet (UV-C) to far-red. The new product family also includes Seoul’s SunLike Series natural spectrum LEDs, which produce light that closely matches the spectrum of natural sunlight.

Seoul Semiconductor introduced the new Horticultural Series LEDs at the 2017 Horticultural Lighting Conference in Denver, CO, on October 17. One of the invited speakers for the conference will be Dr. Peter Barber, product marketing manager for Seoul VioSys, on “The Myriad Ways That UV LEDs Will Impact Society Through Horticultural Lighting.”

Delivering a full spectrum of possibilities for horticultural applications
While many conventional LED manufacturers have developed horticultural-optimized LEDs in the visible light spectrum from violet (~390nm) to red (~700nm) wavelengths, the new Horticultural Series LEDs from Seoul Semiconductor extend this spectrum to include multiple ultraviolet bands (UV-A, UV-B & UV-C), as well as into far-red bands (~700nm to 800nm). The extension of this new LED product series beyond the ends of the visible spectrum provides horticultural lighting designers with the capability to develop the widest range of light sources beneficial for growing and propagating different types of vegetables and plants in indoor settings.

Also playing a critical role in the new Horticultural Series LED family is Seoul Semiconductor’s recently-introduced SunLike LED technology, the first LED to closely match the spectrum of natural sunlight, providing a light source more like natural light than conventional “white light” LEDs, providing lighting designers with a wider range of options as they develop horticultural-specific lighting systems.

“By extending the spectrum of LEDs to include both ultraviolet and far-red light sources, Seoul Semiconductor provides horticultural lighting designers an entirely new spectrum of possibilities in developing lighting systems for specific plant growth and propagation,” explained Mark McClear, Vice President, Americas, of Seoul Semiconductor. “Our Horticultural Series LEDs include high-power, mid-power and COB devices, enabling the design of a wide range of lighting fixtures – from high-bay and directional lights to rack-mounted fixtures for vertical farming systems – all from a single LED manufacturer.”

SunLike Series Chip-on-Board (COB) LEDs
For lighting fixtures designed to produce light that closely matches the spectrum of natural sunlight, Seoul offers a range of standard COB LED modules ranging from 6W to 25W.

High Power Horticultural Series LEDs include UV, white, and color devices
For high-bay and other lighting fixtures, Seoul’s Horticultural Series LEDs include the following options:
Ultraviolet
UV-C – Producing dominant wavelength of 275nm, these un-lensed UV LEDs can be used for sterilization.
UV-B – Producing dominant wavelength between 280 – 310nm, these un-lensed UV LEDs are rated at 10mW with a photosynthetic photon flux (PPF) value of 0.25µmols/s.
UV-A – Producing dominant wavelength between 360 – 400nm, these lensed UV LEDs are rated at 636mW with a PPF value of 2.2µmols/s.
Deep Blue – Featuring a dominant wavelength of 449 – 461nm, these deep blue dome-lensed LEDs are rated at 650mW with a PPF of 2.6µmols/s.
Deep Red – With a dominant wavelength of 646 – 665nm, these visible red LEDs are rated at 345mW with a PPF of 2.32µmols/s.
Far-Red – Producing a dominant wavelength of ~730nm (peak), these near-infrared LEDs are rated at 260mW with a PPF of 1.64µmols/s.
White – These high-power white LEDs feature a light output of 168lm with a PPF of 2.4µmols/s.

Mid Power Horticultural Series LEDs include SunLike natural spectrum LEDs & color devices
For vertical rack systems and other close-up lighting fixtures, Seoul’s Horticultural Series LEDs include the following mid-power options in standard 3030 packages:
SunLike 5000K – With a color temperature ranging from 2700K – 5000K, these LEDs produce light that closely matches the spectrum of natural sunlight, and feature a light output of 22.3lm with a PPF of 0.38µmols/s.
Deep Blue – Featuring a dominant wavelength of 449 – 461nm, these blue mid-power LEDs are rated at 155mW with a PPF of 0.62µmols/s.
Deep-Red – With a dominant wavelength of 646 – 665nm, these visible red LEDs have a PPF of 0.43µmols/s, and a light output of 77lm/mW.
Far-Red – Producing a dominant wavelength of ~730nm (peak), these near-infrared mid-power LEDs are rated at 50mW with a PPF of 0.38µmols/s.