Yearly Archives: 2017

In today’s “internet of things,” devices connect primarily over short ranges at high speeds, an environment in which surface acoustic wave (SAW) devices have shown promise for years, resulting in the shrinking size of your smartphone. To obtain ever faster speeds, however, SAW devices need to operate at higher frequencies, which limits output power and can deteriorate overall performance. A new SAW device looks to provide a path forward for these devices to reach even higher frequencies.

A team of researchers in China has demonstrated a SAW device that can achieve frequencies six times higher than most current devices. With embedded interdigital transducers (IDTs) on a layer of combined aluminum nitride and diamond, the team’s device was also able to boost output significantly. Their results are published this week in Applied Physics Letters, from AIP Publishing.

“We have found the acoustic field distribution is quite different for the embedded and conventional electrode structures,” said Jinying Zhang, one of the paper’s authors. “Based on the numerical simulation analysis and experimental testing results, we found that the embedded structures bring two benefits: higher frequency and higher output power.”

Surface acoustic wave devices transmit a high-frequency signal by converting electric energy to acoustic energy. This is often done with piezoelectric materials, which are able to change shape in the presence of an electric voltage. IDT electrodes are typically placed on top of piezoelectric materials to perform this conversion.

Ramping up the operational frequency of IDTs — and the overall signal speed — has proven difficult. Most current SAW devices top out at a frequency of about 3 gigahertz, Zhang said, but in principle it is possible to make devices that are 10 times faster. Higher frequencies, however, demand more power to overcome the signal loss, and in turn, some features of the IDTs need to be increasingly small. While a 30 GHz device could transmit a signal more quickly, its operational range becomes limited.

“The major challenge is still the fabrication of the IDTs with such small feature sizes,” Zhang said. “Although we made a lot of efforts, there are still small gaps between the side walls of the electrodes and the piezoelectric materials.”

To ensure that the transducers had the proper feature size, Zhang’s team needed a material with a high acoustic velocity, such as diamond. They then coupled diamond, a material that changes its shape very little with electric voltage, with aluminum nitride, a piezoelectric material, and embedded the IDT inside their new SAW device.

The resulting device operated at a frequency of 17.7 GHz and improved power output by 10 percent compared to conventional devices using SAWs.

“The part which surprised us most is that the acoustic field distribution is quite different for the embedded and conventional electrode structures,” Zhang said. “We had no idea at all about it before.”

Zhang said she hopes this research will lead to SAW devices used in monolithic microwave integrated circuits (MMICs), low-cost, high-bandwidth integrated circuits that are seeing use in a variety of forms of high speed communications, such as cell phones.

The coldest chip in the world


December 20, 2017

Physicists at the University of Basel have succeeded in cooling a nanoelectronic chip to a temperature lower than 3 millikelvin. The scientists from the Department of Physics and the Swiss Nanoscience Institute set this record in collaboration with colleagues from Germany and Finland. They used magnetic cooling to cool the electrical connections as well as the chip itself. The results were published in the journal Applied Physics Letters.

Even scientists like to compete for records, which is why numerous working groups worldwide are using high-tech refrigerators to reach temperatures as close to absolute zero as possible. Absolute zero is 0 kelvin or -273.15°C. Physicists aim to cool their equipment to as close to absolute zero as possible, because these extremely low temperatures offer the ideal conditions for quantum experiments and allow entirely new physical phenomena to be examined.

A chip with a Coulomb blockade thermometer on it is prepared for experiments at extremely low temperatures. Credit: University of Basel, Department of Physics

A chip with a Coulomb blockade thermometer on it is prepared for experiments at extremely low temperatures. Credit: University of Basel, Department of Physics

Cooling by turning off a magnetic field

The group led by Basel physicist Professor Dominik Zumbühl had previously suggested utilizing the principle of magnetic cooling in nanoelectronics in order to cool nanoelectronic devices to unprecedented temperatures close to absolute zero. Magnetic cooling is based on the fact that a system can cool down when an applied magnetic field is ramped down while any external heat flow is avoided. Before ramping down, the heat of magnetization needs to be removed with another method to obtain efficient magnetic cooling.

A successful combination

This is how Zumbühl’s team succeeded in cooling a nanoelectronic chip to a temperature below 2.8 millikelvin, thereby achieving a new low temperature record. Dr Mario Palma, lead author of the study, and his colleague Christian Scheller successfully used a combination of two cooling systems, both of which were based on magnetic cooling. They cooled all of the chip’s electrical connections to temperatures of 150 microkelvin – a temperature that is less than a thousandth of a degree away from absolute zero.

They then integrated a second cooling system directly into the chip itself, and also placed a Coulomb blockade thermometer on it. The construction and the material composition enabled them to magnetically cool this thermometer to a temperature almost as low as absolute zero as well.

“The combination of cooling systems allowed us to cool our chip down to below 3 millikelvin, and we are optimistic than we can use the same method to reach the magic 1 millikelvin limit,” says Zumbühl. It is also remarkable that the scientists are in a position to maintain these extremely low temperatures for a period of seven hours. This provides enough time to conduct various experiments that will help to understand the properties of physics close to absolute zero.

EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.

The chip-scale packaging of The EPC2049 handles thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures a mere 2.5 mm x 1.5 mm (3.75 mm2). Designers no longer have to choose between size and performance – they can have both!

“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen,” said Alex Lidow, EPC’s co-founder and CEO.

Renesas Electronics Corporation (TSE:6723, “Renesas”), a supplier of advanced semiconductor solutions, today announced the integration of Intersil Corporation as a legal entity and a new branding policy following the acquisition of Intersil on February 24, 2017. Effective January 1, 2018, Intersil Corporation is expected to operate in the market under the name of Renesas Electronics America Inc. The completion of Renesas’ U.S. entity integration marks a major milestone in the integration process, which remains well on track. As well, the integration process in Japan and Korea is expected to be completed on or about January 1, 2018. The remaining Intersil entities are expected to be integrated in the near future.

“With the integration of the Intersil business, we have taken another significant step towards maximizing the full potential of the combined business, providing scale, stability and a comprehensive product mix,” said Bunsei Kure, Representative Director, President and CEO of Renesas Electronics Corporation. “With the enhanced global strength, Renesas is in the best position to further strengthen its leadership in the global semiconductor market.”

“The promise of the Renesas and Intersil integration has already begun to materialize as we’ve started operating as one company,” said Necip Sayiner, Executive Vice President of Renesas, President of Renesas Electronics America and President, CEO and Director of Intersil. “We are fully combining our portfolios, technologies and talent to maximize the potential of the acquisition synergies. As a result, we are positioned to expand our business in the broad-based market, providing complete system solutions that enable customers to get to market faster.”

As of January 1, 2018, Intersil Corporation is expected to complete an absorption-type merger with Renesas Electronics America Inc., the U.S. subsidiary of Renesas, leaving Intersil Corporation as the surviving company. Intersil Corporation will then change its name to Renesas Electronics America Inc.

Prior to this entity integration, Renesas implemented a transition to a new organizational structure in July 2017 to accelerate the integration of the Intersil business. The aim of this transition is to move beyond its Japan-centric business management and to achieve a truly global company that acts as “One Global Renesas,” a company that operates as a global entity.

Nova (Nasdaq: NVMI), a provider of metrology solutions for advanced process control used in semiconductor manufacturing, today announced that Ronnie (Miron) Kenneth, former Chief Executive Officer of Voltaire Technologies Ltd. (Nasdaq: VOLT) and former Chief Executive Officer of Pontis Ltd., has been appointed to the company’s Board of Directors.

Mr. Kenneth is a veteran high-tech leader who served for ten years as Chairman and Chief Executive Officer at Voltaire, leading it to an initial public offering on Nasdaq in 2007. Following the company’s merger with Mellanox Technologies Ltd. (Nasdaq: MLNX) in 2011, Mr. Kenneth became the Chief Executive Officer of Pontis Ltd., a privately-held company, until 2013. Mr. Kenneth currently serves as the Chairman of Teridion Technologies Ltd. and Varada Ltd., and he is a director of Allot Communications Ltd. (Nasdaq: ALLT) and Orbotech Ltd. (Nasdaq: ORBK).

“Ronnie brings a broad experience in leading technology companies. I am looking forward to adding his extensive experience in the high-tech industry to our board as Nova continues to expand. I have no doubt that Ronnie will be an important addition to our Board of Directors and will contribute to Nova’s success,” commented Dr. Micha Brunstein, Nova’s Chairman of the Board.

“I am excited to join Nova and have the opportunity to contribute to its continued growth,” added Mr. Kenneth. “Nova has already established a strong position in a rapidly expanding market, and I believe that this talented board will continue to chart a course of success for the company.”

EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today announced that it has completed construction and opened a new building at its corporate headquarters in Austria to expand capacity for producing its industry-leading process equipment. The building, part of an investment of more than 20 million Euros that was announced earlier this year, allows for a significant expansion of warehouse space and provides more than 50 percent additional test room space for the final assembly of EVG’s high-precision systems, as well as technical source inspection of the systems by its customers.

“EVG operates in highly dynamic markets, where we always strive to provide our customers with the latest technologies to realize their product ideas with the shortest possible time to market–true to EVG’s Triple-i philosophy of invent-innovate-implement,” stated Dr. Werner Thallner, executive operations and financial director at EV Group. “Our headquarters expansion helps ensure that we continue to deliver on this pledge to our customers. I’m pleased to say that we completed this expansion in record time too, and we already have plans for additional capacity expansion in preparation for future growth.”

The completed building at EV Group's headquarters is part of an investment of more than 20 million Euros to expand the company's production capacity.

The completed building at EV Group’s headquarters is part of an investment of more than 20 million Euros to expand the company’s production capacity.

The new test rooms, which are designed to house larger systems including high-volume manufacturing platforms and solutions for panel-sized substrates, are equipped with the latest air conditioning and cleanroom technology. The ambient conditions created through these measures are similar to those found in the semiconductor fabs or bio-medical labs of EVG’s global customers. The sophisticated security concept at EVG’s headquarters, which extends to the new building complex, enables customers to have controlled access to individual test rooms where the technical source inspection of their tools can take place together with EVG specialists.

Several EVG systems have already been moved to the new facility for final assembly, software installation and initial set-up in order to make more room available for fulfilling additional system orders.

More than 70,000 players in the electronics manufacturing industry are expected to descend upon SEMICON China for technology and innovation insights to accelerate already strong industry growth. March 14-16, 2018, at the Shanghai New International Expo Centre (SNIEC), SEMICON China 2018 will bring together top executives and technologists in six exhibition halls, the most ever in the event’s 30-year history, to find opportunities in key focus areas including Smart Automotive and Smart Manufacturing, Green Tech, Advanced Technology, and Power and Compound Semiconductors.

Concurrent with FPD China, SEMICON China 2018, the largest and most influential gathering of the semiconductor supply chain in China, is now open for visitor registration.

SEMICON China technical forums will address the most pressing industry topics:

  • CSTIC 2018: Staged in conjunction with SEMICON China, this has ranked among the largest and most comprehensive annual semiconductor technology conferences in China since 2000. March 11-12, 2018, CSTIC 2018 will feature nine symposiums covering all aspects of semiconductor technology, with a focus on manufacturing and advanced technology.
  • SIIP: Tech Innovation and Investment Forum: SIIP is a key international platform for semiconductor industry investment in China. Informed by China’s IC policy to fund key semiconductor sectors, leaders of China’s National IC Fund and municipal IC funds will join leaders from global investment institutions to discuss hot opportunities in China semiconductor investment – and applications such as Artificial Intelligence (AI).
  • Win-Win: Build China’s IC Ecosystem: Spurred by a strong market outlook, policy and the national fund, fab construction in China will surge over the next five years, with OSAT (Outsourced Semiconductor Assembly and Test) making strategic investments. Industry leaders will explore how China’s semiconductor manufacturing industry will strengthen its core competency, prioritize resources, revisit its business model, and thrive in the electronics ecosystem.
  • Power and Compound Semiconductor International Forum: Among the largest power and compound semiconductor industry forums in Asia, this two-day event features four sessions: Wide Band Gap Power Electronics, Optoelectronics, Compound Semiconductor in Communications, and Emerging Power Device Technology
  • Smart Automotive Forum – AI Inside: Top automotive, electronic, AI and technology executives will gather to discuss the future of the rapidly disrupting automotive industry.
  • China Memory Strategic Forum: Driven by market needs and policy support, three new Chinese Memory foundries are accelerating memory development. Industry leaders will explore ways multinationals can benefit more from China’s memory market, China can better leverage its technical strength, and Chinese companies can enhance research and development collaboration with global partners.
  • Green High-Tech Facility Forum: With more than 10 fabs now under construction in China,China’s semiconductor industry is entering a stage of rapid growth. Green Tech leaders will discuss how China can improve factory design and construction; optimize energy efficiency of semiconductor manufacturing equipment; enhance machine platform stability, chemicals and gas management, and wastewater treatment; and improve risk management.
  • Smart Manufacturing Forum: The semiconductor industry must be proactive in all aspects of smart manufacturing. This session will address automation, product tractability, cost and cycle time reduction, enhancements in productivity and yield, and efficiency improvements in front- and back-end factories.
  • Semiconductor New Technology Conference: The best way to promote new technology is through direct customer interaction and collaboration. Join this conference to discuss your new IC, new IOT solution, new machine or new material with more 200 customers from around the world.
  • 2018 China Display Conference-Emerging Display Forum: Join this forum, concurrent with FPD China 2018, to exchange ideas on emerging display technologies and future development.
  • MSIG International IOT Conference 2018: MEMS, sensors, IC, NB-IoT, 5G and smart application experts will share their insights on the IoT market and how to maximize the value of IoT applications.

SEMICON China also features three theme pavilions:

  • IC Manufacturing: See products, technologies, and manufacturing solutions focused on serving China’s fabless IC community, from design to final manufacturing.
  • LED and Sapphire: Learn how China has become the world’s largest sapphire manufacturing center.
  • ICMTIA: See the local IC material industry demonstrate its capabilities to support semiconductor industry growth.

Tessera Technologies, Inc. (“Tessera”), a subsidiary of Xperi Corporation (the “Company”) (NASDAQ: XPER), today announced that it and certain of its affiliates entered into agreements with Broadcom Ltd. and certain of its affiliates (“Broadcom”), customers, and suppliers to settle and dismiss all pending litigation between them. In conjunction with the settlement, Broadcom entered into a new multi-year patent license agreement with Tessera.

“We are very pleased to have reached this settlement and license agreement with Broadcom,” said Jon Kirchner, CEO of Xperi Corporation. “This agreement validates the strength and breadth of our semiconductor portfolio, and provides us with a clear path to unlock the value of our innovations with other companies in the semiconductor industry.”

“The resolution of our dispute with Broadcom on mutually agreeable terms is a major milestone for Tessera’s IP licensing business. We look forward to a constructive relationship with Broadcom and thank the Broadcom team for their professional approach to reaching this resolution,” said Murali Dharan, president of Tessera.

The license agreement provides for an upfront payment in the fourth quarter of 2017 and recurring quarterly payments beginning in the first quarter of 2018. The other terms of the agreements are confidential.

Tessera and Invensas are subsidiaries of Xperi Corporation (NASDAQ: XPER). Over the past 27 years, research and development at both Tessera and Invensas has led to significant innovations in semiconductor packaging technology, which has been widely licensed and is found in billions of electronic devices globally.

Cypress Semiconductor Corp. (Nasdaq: CY) today announced the appointment of Jeannine Sargent to its board of directors. Sargent brings 30 years of experience encompassing leadership, operations, marketing and engineering roles within a diverse mix of high tech component and systems companies across multiple industries. As part of her responsibilities on Cypress’ board, she will serve on the company’s Compensation Committee.

In her most recent role as President of Innovation and New Ventures at Flex, a leading contract design, engineering and manufacturing company, Sargent led the fastest growing and highest margin design-enabled business, which was at the core of Flex’s long-term strategic growth plan. Prior to this, she served as president of Flex’s Energy business, which she helped build into a global multi-billion-dollar industry leader focusing on renewable energy, smart grid and solid-state lighting technologies, products and services. In her career, Sargent has served as CEO at both Oerlikon Solar, a thin-film silicon solar photovoltaic (PV) module manufacturer, and Voyan Technology, an embedded systems software provider to the communications and semiconductor industries. She currently serves on several investment and advisory boards and is on the board of trustees at Northeastern University.

“Jeannine Sargent is another excellent addition to Cypress’ board,” said Steve Albrecht, Cypress’ chairman. “She strengthens our team with the depth of her experience in growing innovative and profitable systems businesses at the forefront of emerging, high tech industries. I’m excited for her valuable contributions toward supporting the management team as they continue executing our strategy to become the leading embedded system solutions supplier in high-growth segments including Automotive, Industrial and applications across the IoT.”

Sargent holds a B.S. in chemical engineering from Northeastern University and certificates from the executive development programs at the MIT Sloan School of Management, Harvard University and Stanford University.

Intel today announced the availability of the Intel Stratix 10 MX FPGA, the industry’s first field programmable gate array (FPGA) with integrated High Bandwidth Memory DRAM (HBM2). By integrating the FPGA and the HBM2, Intel Stratix 10 MX FPGAs offer up to 10 times the memory bandwidth when compared with standalone DDR memory solutions. These bandwidth capabilities make Intel Stratix 10 MX FPGAs the essential multi-function accelerators for high-performance computing (HPC), data centers, network functions virtualization (NFV), and broadcast applications that require hardware accelerators to speed-up mass data movements and stream data pipeline frameworks.

In HPC environments, the ability to compress and decompress data before or after mass data movements is paramount. HBM2-based FPGAs can compress and accelerate larger data movements compared with stand-alone FPGAs. With High Performance Data Analytics (HPDA) environments, streaming data pipeline frameworks like Apache Kafka and Apache Spark Streaming require real-time hardware acceleration. Intel Stratix 10 MX FPGAs can simultaneously read/write data and encrypt/decrypt data in real-time without burdening the host CPU resources.

“To efficiently accelerate these workloads, memory bandwidth needs to keep pace with the explosion in data,” said Reynette Au, vice president of marketing, Intel Programmable Solutions Group. “We designed the Intel Stratix 10 MX family to provide a new class of FPGA-based multi-function data accelerators for HPC and HPDA markets.”

The Intel Stratix 10 MX FPGA family provides a maximum memory bandwidth of 512 gigabytes per second with the integrated HBM2. HBM2 vertically stacks DRAM layers using silicon via (TSV) technology. These DRAM layers sit on a base layer that connects to the FPGA using high density micro bumps. The Intel Stratix 10 MX FPGA family utilizes Intel’s Embedded Multi-Die Interconnect Bridge (EMIB) that speeds communication between FPGA fabric and the DRAM. EMIB works to efficiently integrate HBM2 with a high-performance monolithic FPGA fabric, solving the memory bandwidth bottleneck in a power-efficient manner.

Intel is shipping several Intel Stratix 10 FPGA family variants, including the Intel Stratix 10 GX FPGAs (with 28G transceivers) and the Intel Stratix 10 SX FPGAs (with embedded quad-core ARM processor). The Intel Stratix 10 FPGA family utilizes Intel’s 14 nm FinFET manufacturing process and incorporates packaging technology, including EMIB.