Yearly Archives: 2017

Semiconductor test equipment supplier Advantest Corporation (TSE:6857) has developed the M4171 handler to meet the mobile electronics market’s needs for cost-efficient thermal control testing of ICs with high power dissipation during device characterization and pre-production bring up.  This portable, single-site handler automates device loading and unloading, thermal conditioning and binning in engineering labs, where most testing today involves manual device handling. It also features an active thermal control (ATC) capability typically available only on larger footprint, more costly production-volume handlers.

The M4171 can be used to remotely conduct device handling and thermal control from anywhere around the world through a network connection.  In addition to requiring fewer operators and lowering labor costs, this handler maximizes system utilization among working groups in different locations.

The combination of automated device handling, wide-temperature ATC capabilities from -45° C to 125° C and remote operation make the M4171 unique.  It can run multi-mode test processes (Single Insertion Multiple Temperature), automated testing, automatic ID testing, output tray re-testing and manual testing, both pre-defined and user defined.

The Tri Temp Technology on the M4171 enables the users to operate over a broad range of temperatures which greatly increases any lab’s efficiency.  The system uses direct device-surface contact, which enables quick temperature switching for fast ramp up and ramp down and improves cycle temperature testing by over 40 percent compared to manual thermal-control solutions.

The M4171 handler is compatible with the V93000 and T2000 platforms as well as other testers.  Other features include a 2D code reader, a device rotator and a high contact force option.  Operation is simple with an intuitive, easy-to-use GUI that includes pre-defined functions.

“By bringing cost-efficient automated testing into the lab and enabling our customers to get higher utilization from their installed base, we are providing substantial productivity advantages,” said Toshio Goto, executive officer and manager of the Device Handling business unit at Advantest.  “As our first single-site ATC handler, the M4171 is opening new market opportunities for us in device characterization within labs and benchtop environments.”

 

SiFive announced today that it has joined GLOBALFOUNDRIES’ FDXcelerator Partner Program, and will be making RISC-V CPU IP including SiFive’s E31 and E51 RISC-V cores available on GF’s 22FDX process technology. Based on the open source RISC-V ISA, the SiFive E31 offers embedded chip designers new capabilities in high performance within strict area and power requirements, and the SiFive E51 offers a full 64-bit performance at 32-bit price, power and area.

“As the RISC-V ecosystem continues to grow, SiFive’s leading CPU IP is seeing increased adoption. Our partnership with GF is going to enable an even larger pool of system designers to build on an industry-leading process platform,” said Naveed Sherwani, CEO, SiFive. “SiFive has led the RISC-V ecosystem from early on and we are excited to continue extending RISC-V into new market segments.”

“As members of the RISC-V Foundation, we are excited to see more RISC-V IP offerings made available on our processes,” said Gregg Bartlett, senior vice president of CMOS business at GF. “SiFive’s wide range of cores makes them an ideal partner for our FDXcelerator program.”

GF’s FDXcelerator Program brings together select partners to integrate their products or services into validated, plug-and-play design solutions, giving customers access to a broad set of quality offerings specific to 22FDX technology. The program’s open framework enables members to minimize development time and cost while simultaneously leveraging the inherent power and performance advantages of FDX technology.

Kateeva, a developer of inkjet deposition equipment solutions for OLED display manufacturing, today formally introduced a suite of YIELDjet inkjet equipment for red, green and blue (RGB) pixel deposition to enable the development and pilot production of large-size OLED displays, including televisions (TVs). The new YIELDjet family, which consists of the EXPLORE and EXPLORE PRO systems, provides display manufacturers with an industry-proven inkjet deposition platform to help bring the next generation of OLED TVs and other large-size displays to market. This year so far, Kateeva has shipped four systems from the EXPLORE family. The company expects to ship three additional systems by the second quarter of 2018.

The EXPLORE family broadens Kateeva’s product line and deepens the company’s penetration of the OLED display sector. The YIELDjet FLEX system already leads the inkjet deposition market for OLED mobile displays, with multiple systems deployed in mass production for OLED thin film encapsulation (TFE). The YIELDjet EXPLORE and EXPLORE PRO tools contain the same demonstrated core technologies found in the YIELDjet platform, with system designs that are optimized for rapid development of RGB pixel printing. Both tools, for instance, feature Kateeva’s unique nitrogen printing capability, which provides an oxygen- and- moisture-free enclosure for inkjet deposition. This capability is known to greatly increase OLED device lifetime.

The new products aim to help customers compress their in-house development- to- pilot-production cycle for printed RGB OLED displays, including TVs. To achieve this, the systems are designed for flexibility and scalability. The EXPLORE processes small panels (up to 200 mm square) for initial development, while the EXPLORE PRO targets mid-size panels (up to 55-in. display) for development through pilot production. As many as nine inks can be loaded into each tool at the same time. This enables accelerated evaluation of multiple materials during critical phases of process development.

The products offer an alternative to the traditional RGB pixel deposition approach of vacuum thermal evaporation (VTE) with a fine metal mask (FMM). Instead, printing is used to form the active layers within the pixels that generate the red, green and blue light emitted from the OLED device. Manufacturers are interested in using inkjet printing to overcome the scalability limitations of VTE with FMM.

VTE with FMM is currently used for small displays to fabricate patterned RGB active layers. However, the approach has not been successfully scaled to enable production of large displays such as those required for premium TVs. White OLED (WOLED) TV works around the issue by using VTE to form an un-patterned white OLED layer. This eliminates the need for FMM and creates the red, green, and blue light using three separate color filters (similar to the structure of a liquid crystal display). Although WOLED TVs are considered the best on the market, RGB OLED TVs fabricated using inkjet deposition can potentially offer superior performance. Moreover, manufacturing costs could be 20 percent lower, according to a recent analysis.

The potential of inkjet-fabricated RGB OLED TVs, coupled with the enabling capabilities of the YIELDjet EXPLORE products, have generated excitement among OLED display manufacturers, according to Kateeva’s President and COO, Dr. Conor Madigan. “There is increasing enthusiasm among our customers to develop RGB OLED TVs and we believe our new systems will help them accelerate their initiatives,” he said. “These companies are innovating rapidly and pioneering novel processes to mass-produce differentiated displays. Our products let them utilize Kateeva’s unique technologies as part of their inkjet RGB pixel printing programs. We are excited to work with them to move this approach closer to mass production.”

The YIELDjet Inkjet Advantage

Kateeva’s inkjet solution for RGB pixel deposition R&D utilizes core disruptive features found in the company’s YIELDjet platform. This OLED production equipment solution has already helped display manufacturers transition to flexible OLED mass production with high yields and low costs. Now, the same features, coupled with additional innovations for RGB pixel printing, promise to enable a similar transition to RGB OLED TV mass production by addressing customers’ yield and productivity priorities. Key YIELDjet technical features and advantages include:

  • Pure process environment: Trace amounts of oxygen and moisture, as well as large particles, can degrade OLED device performance and reduce yield. The same impurities are known to degrade OLED device lifetime. Processing in a clean, high-purity environment, therefore, is a central requirement for OLED front-plane manufacturing equipment. The YIELDjet solution features a specially designed nitrogen-purged enclosure that delivers an ultra-pure printing environment and enables fast recovery after maintenance. The result is longer OLED lifetime, higher yields, and higher uptime.
  • Superior uniformity: Non-uniform deposition of the printed layer can create “mura”. Mura, which refers to visibly noticeable non-uniformities in the finished display, will reduce yield. Print non-uniformity can be caused by inherent variations in the nozzles contained in the print array. The YIELDjet platform addresses the issue by combining two proprietary technologies—ultra-fast print head monitoring and Smart Mixing™ software. A remote drop inspection (RDI) system measures the drop characteristics for every nozzle in the print array on a continuous basis so that the state of the print array is known at all times. The nozzle data is used to calibrate the proprietary Smart Mixing software, which determines the optimized nozzle mixing for each sub-pixel during the print. The result is a system that delivers displays that are free of print mura in mass production.
  • High resolution: To achieve the resolution required for a product like an 8K TV, a key printing imperative is ink drop placement accuracy. This requires high stage accuracy. To enable high stage accuracy for all glass sizes, Kateeva pioneered the use of a “floating stage” for inkjet printers. With this capability, the glass floats on a thin cushion of nitrogen, which flows from a specially designed stationary stage. As the glass is scanned at high speed over the nitrogen cushion, proprietary stage-error correction technology is deployed to ensure the high accuracies needed for RGB pixel printing.

In addition to RGB pixel printing, the EXPLORE tools can be configured to process OLED TFE. This allows customers who are interested in both applications to conduct R&D or pilot production with the same EXPLORE or EXPLORE PRO tool.

North America-based manufacturers of semiconductor equipment posted $2.02 billion in billings worldwide in October 2017 (three-month average basis), according to the October Equipment Market Data Subscription (EMDS) Billings Report published today by SEMI.

SEMI reports that the three-month average of worldwide billings of North American equipment manufacturers in October 2017 was $2.02 billion.The billings figure is 1.8 percent lower than the final September 2017 level of $2.05 billion, and is 23.7 percent higher than the October 2016 billings level of $1.63 billion.

“Equipment billings dipped in October, the fourth consecutive monthly decline during this record spending year,” said Ajit Manocha, president and CEO of SEMI. “In spite of this seasonal weakness, we expect equipment spending to increase by 30 percent or more this year and are positive about growth in 2018.”

The SEMI Billings report uses three-month moving averages of worldwide billings for North American-based semiconductor equipment manufacturers. Billings figures are in millions of U.S. dollars.

Billings
(3-mo. avg)
Year-Over-Year
May 2017
$2,270.5
41.8%
June 2017
$2,300.3
34.1%
July 2017
$2,269.7
32.9%
August 2017
$2,181.8
27.7%
September 2017 (final)
$2,054.8
37.6%
October 2017 (prelim)
$2,017.0
23.7%

Source: SEMI (www.semi.org), November 2017

 

SPTS Technologies, an Orbotech company and a supplier of advanced wafer processing solutions for the global semiconductor and related industries, today announced it has won an order for its Omega plasma etch system from Chengdu HiWafer Semiconductor Co., Ltd (HiWafer), China’s first pure-wafer foundry, to establish their new gallium nitride (GaN) on silicon carbide (SiC) production line. SPTS’s Synapse and ICP process modules on an Omega c2L platform will etch SiC backside vias (BSV) and GaN epitaxial layers to manufacture high power radio frequency (RF) devices. The high rate Omega system was selected over the competition because the Synapse provided superior SiC etch rates while the ICP module delivered improved selectivity for GaN etch.

“HiWafer is already a well-established Chinese foundry producer of gallium arsenide based pHEMT and HBT RF devices currently used in 4G communication, and they are an early adopter of SiC and GaN materials for use in high-end RF devices that target the worldwide 5G protocol,” stated Kevin Crofton, President of SPTS Technologies and Corporate Executive Vice President at Orbotech. “This leadership position is important as Power and RF applications are high on the ‘Made in China 2025’ agenda for promoting domestic production of semiconductor devices, and companies like HiWafer are well-positioned to contribute to realizing this national initiative. Our leadership in high rate etching of SiC and other dielectric materials will support HiWafer to provide manufacturing solutions for the coming 5G wave.”

Mr. Nengwu Gao, General Manager of HiWafer, stated, “Orbotech’s SPTS Technologies is a recognized leader in compound wafer processing solutions to the global power and RF device industries. The addition of SPTS’s Omega plasma etch system gives us the tools to compete in GaN on SiC RF technology in telecoms and transportation applications, including railway systems. Acquiring this capability enables us to explore new applications and supports our ambitions to become a highly profitable and successful semiconductor foundry.”

Leti, a technology research institute of CEA Tech, announced that Emmanuel Sabonnadiere has been named CEO, succeeding Marie-Noelle Semeria.

Emmanuel SABONNADIERE  P_ Jayet-CEA-010Sabonnadiere, who has more than 25 years of executive leadership experience in a variety of large technology environments, joins Leti from CEA Tech, where he led the industrial-partnership program. He brings a strong background in new-technology development with broad private-sector expertise in operational excellence, team building and guiding multicultural organizations in business transformation in Europe and globally.

As Leti’s chief executive officer, Sabonnadiere leads the activities of one of Europe’s largest micro- and nanotechnologies research institutes, which employs approximately 1,900 scientists and engineers, has a portfolio of 2,700 patents and has launched more than 60 startups.

“Success in today’s demanding international digital landscape requires a combination of deep technological expertise, advanced platforms, a commitment to customer and partner success and a shared excitement and agility about the new opportunities,” Sabonnadiere said. “This is where Leti is today, and I am very excited to join this world-class team to develop the solutions that will bring digital innovations to the benefit of leading technology companies around the world.”

Prior to joining CEA, Sabonnadiere was CEO of the Philips Lighting’s Business Group Professional in Amsterdam. From 2008 to 2014, he was CEO and chairman of General Cable Europe in Barcelona, and from 2005 to 2008 he served as CEO of NKM Noell in Wurzburg, Germany. Before that, he served as vice president of Alstom T&D for five years. Early in his career, he held multiple positions at Schneider Electric, including managing director of development for equipment units.

During his career, he has designed and implemented strategic plans for process optimization, product redesign-to-costs, market repositioning and system development.

Sabonnadiere holds a Ph.D. degree in physics from the Ecole Centrale de Lyon, an MBA degree from Ecole Supérieure des Affaires de Grenoble and an engineering degree in information technology from the Université Technologie Compiègne.

Sabonnadiere is a fully qualified instructor at the ski school in Les Ménuires, and member of the advisory board of IAC.

Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced that Anirudh Devgan, executive vice president and general manager of the Digital & Signoff Group and the System & Verification Group, has been appointed president of Cadence, effective immediately.

Dr. Devgan will report to Lip-Bu Tan, Cadence chief executive officer. Together, they will further the company’s System Design Enablement strategy by accelerating the momentum in the core electronic design automation (EDA) business and delivering to the expanding needs of its growing customer base.

As Cadence’s President, Dr. Devgan will oversee Cadence’s EDA products, including the digital implementation and signoff, functional verification, custom IC design, PCB and packaging businesses. Additionally, he will be responsible for the corporate strategy, marketing ­and business development functions.

“This is an exciting time for Cadence, and Anirudh will play a key leadership role as we capture opportunities that are being driven by groundbreaking trends in high-performance and edge computing, automotive electronics and machine learning, among others,” said Lip-Bu Tan, CEO of Cadence. “Anirudh is a visionary and an innovator and a strong team leader with broad operational experience. Both Cadence and its customers will benefit from his enhanced role. I am delighted to partner with him to further our System Design Enablement strategy by accelerating the strong momentum in our existing businesses and by expanding into new areas. The Cadence Board and management team join me in congratulating Anirudh on his promotion.”

“It is an honor to step into the role of president as Cadence continues to execute well across all areas of our business,” said Anirudh Devgan. “I look forward to working closely with Lip-Bu and my talented colleagues to accelerate our momentum and drive further growth.”

Anirudh Devgan is a 25-year industry veteran. Prior to joining Cadence in 2012, he was at Magma Design Automation, Inc. for seven years where he was general manager of the Custom Design Business Unit. He also spent 12 years at IBM in a variety of technical and management roles. He received numerous awards there, including the IBM Outstanding Innovation award. Dr. Devgan is an IEEE Fellow and has numerous research papers and patents. He received a Bachelor of Technology degree in electrical engineering from the Indian Institute of Technology, Delhi, and M.S. and Ph.D. degrees in electrical and computer engineering from Carnegie Mellon University.

Broadcom Limited (NASDAQ: AVGO) (“Broadcom”), a semiconductor device supplier to the wired, wireless, enterprise storage, and industrial end markets, today announced that it has completed its acquisition of Brocade Communications Systems, Inc. (NASDAQ: BRCD).

Brocade’s common stock will now cease to be traded on NASDAQ. Brocade will operate as an indirect subsidiary of Broadcom and will be led by Jack Rondoni as General Manager. Previously, Rondoni served as Senior Vice President of Storage Networking at Brocade, having joined the company in 2006. Rondoni brings over 20 years of experience in storage, networking and technology.

“We are pleased to complete this transaction, which strengthens Broadcom’s position as a leading provider of enterprise storage and networking solutions and enables us to better serve our OEM customers,” said Hock Tan, President and Chief Executive Officer of Broadcom. “Broadcom has a track record of successfully integrating and growing companies we acquire, enabling us to offer customers a leading portfolio of best-in-class franchises across a diverse set of technologies. We intend to invest in and grow the Brocade business to further enhance its capabilities in mission-critical storage networking.”

Tan continued, “We are pleased to announce Jack’s appointment as General Manager, and would like to welcome the outstanding team of employees at Brocade to the Broadcom family. Together, we will continue to exceed the expectations of our customers.”

“We are very excited to join the Broadcom team and provide compelling benefits for customers and new opportunities for Brocade’s employees,” said Jack Rondoni, General Manager, Brocade business unit. “Broadcom provides us with the scale, resources and complementary capabilities to accelerate growth, execute on our strategic initiatives and extend our market leadership in storage area networking. We share a common culture of innovation and execution, and we look forward to the exciting new growth opportunities we will have as part of the Broadcom team.”

Crosstalk and noise can become a major source of reliability problems of CNT based VLSI interconnects in the near future. Downscaling of component size in integrated circuits (ICs) to nanometer scale coupled with high density integration makes it challenging for researchers to maintain signal integrity in ICs. There are high chances of occurrence of crosstalk between adjacent wires. This crosstalk in turn, will increase the peak noise in the transient signals that pass through the interconnects. As multiple occurrences of crosstalk happen, the noise propagates through multiple stages of wires and the problem worsens to logic failure.

But thanks to semiconducting CNTs, which till now have found applications in the fabrication of futuristic field effect transistors, when placed around an interconnect, can reduce crosstalk to a large extent. Basically, semiconducting CNTs are non-conducting, have small dielectric constant, medium to large band gaps and hence can act as insulating shields to electric fields.

As semiconducting CNTs are one dimensional nanowires, they have very high anisotropic properties along their axis as well as their radius. The dielectric polarizability, which is the measure of number of polarizable bonds in a material, is found to be very smaller along the CNT radius compared to its axis. So, semiconducting CNTs are less polarizable along their radius which further suggests that they have small dielectric constants. The famous Clausius-Mossotti relation can be used to derive the dielectric constant from the dielectric polarizability. Further, this relation also tells that the dielectric constant of a CNT increases with its radius. So, obviously small diameter semiconducting CNTs are the ideal candidates as the low-k dielectric medium between two CNT interconnects.

The contact geometry is modified in such a way that more metal atoms are present at the centre where metallic CNTs are present. The contact has lesser number of metal atoms at the periphery where semiconducting CNTs are present. This helps in building a Schottky barrier at the contact semiconducting CNT interface and hence, inhibits any carrier movement.

Finally, experimental results show that the radial dielectric constant can be as low as 2.82 if (2,2) CNTs are used as shields. The coupling capacitance between adjacent wires is dependent on the interconnect thickness as well as the semiconducting CNT shield thickness. Crosstalk between CNT wires can be reduced by 28% if semiconducting CNTs are used. The crosstalk induced peak noise was also found to be 25% lesser for semiconducting CNT shielded interconnects at different input voltages of 0.8V, 0.5V and 0.3V.

For the first time, physicists have developed a technique that can peer deep beneath the surface of a material to identify the energies and momenta of electrons there.

The energy and momentum of these electrons, known as a material’s “band structure,” are key properties that describe how electrons move through a material. Ultimately, the band structure determines a material’s electrical and optical properties.

The team, at MIT and Princeton University, has used the technique to probe a semiconducting sheet of gallium arsenide, and has mapped out the energy and momentum of electrons throughout the material. The results are published today in the journal Science.

By visualizing the band structure, not just at the surface but throughout a material, scientists may be able to identify better, faster semiconductor materials. They may also be able to observe the strange electron interactions that can give rise to superconductivity within certain exotic materials.

“Electrons are constantly zipping around in a material, and they have a certain momentum and energy,” says Raymond Ashoori, professor of physics at MIT and a co-author on the paper. “These are fundamental properties which can tell us what kind of electrical devices we can make. A lot of the important electronics in the world exist under the surface, in these systems that we haven’t been able to probe deeply until now. So we’re very excited — the possibilities here are pretty vast.”

Ashoori’s co-authors are postdoc Joonho Jang and graduate student Heun Mo Yoo, along with Loren Pfeffer, Ken West, and Kirk Baldwin, of Princeton University.

Pictures beneath the surface

To date, scientists have only been able to measure the energy and momentum of electrons at a material’s surface. To do so, they have used angle-resolved photoemission spectroscopy, or ARPES, a standard technique that employs light to excite electrons and make them jump out from a material’s surface. The ejected electrons are captured, and their energy and momentum are measured in a detector. Scientists can then use these measurements to calculate the energy and momentum of electrons within the rest of the material.

“[ARPES] is wonderful and has worked great for surfaces,” Ashoori says. “The problem is, there is no direct way of seeing these band structures within materials.”

In addition, ARPES cannot be used to visualize electron behavior in insulators — materials within which electric current does not flow freely. ARPES also does not work in a magnetic field, which can greatly alter electronic properties inside a material.

The technique developed by Ashoori’s team takes up where ARPES leaves off and enables scientists to observe electron energies and momenta beneath the surfaces of materials, including in insulators and under a magnetic field.

“These electronic systems by their nature exist underneath the surface, and we really want to understand them,” Ashoori says. “Now we are able to get these pictures which have never been created before.”

Tunneling through

The team’s technique is called momentum and energy resolved tunneling spectroscopy, or MERTS, and is based on quantum mechanical tunneling, a process by which electrons can traverse energetic barriers by simply appearing on the other side — a phenomenon that never occurs in the macroscopic, classical world which we inhabit. However, at the quantum scale of individual atoms and electrons, bizarre effects such as tunneling can occasionally take place.

“It would be like you’re on a bike in a valley, and if you can’t pedal, you’d just roll back and forth. You would never get over the hill to the next valley,” Ashoori says. “But with quantum mechanics, maybe once out of every few thousand or million times, you would just appear on the other side. That doesn’t happen classically.”

Ashoori and his colleagues employed tunneling to probe a two-dimensional sheet of gallium arsenide. Instead of shining light to release electrons out of a material, as scientists do with ARPES, the team decided to use tunneling to send electrons in.

The team set up a two-dimensional electron system known as a quantum well. The system consists of two layers of gallium arsenide, separated by a thin barrier made from another material, aluminum gallium arsenide. Ordinarily in such a system, electrons in gallium arsenide are repelled by aluminum gallium arsenide, and would not go through the barrier layer.

“However, in quantum mechanics, every once in a while, an electron just pops through,” Jang says.

The researchers applied electrical pulses to eject electrons from the first layer of gallium arsenide and into the second layer. Each time a packet of electrons tunneled through the barrier, the team was able to measure a current using remote electrodes. They also tuned the electrons’ momentum and energy by applying a magnetic field perpendicular to the tunneling direction. They reasoned that those electrons that were able to tunnel through to the second layer of gallium arsenide did so because their momenta and energies coincided with those of electronic states in that layer. In other words, the momentum and energy of the electrons tunneling into gallium arsenide were the same as those of the electrons residing within the material.

By tuning electron pulses and recording those electrons that went through to the other side, the researchers were able to map the energy and momentum of electrons within the material. Despite existing in a solid and being surrounded by atoms, these electrons can sometimes behave just like free electrons, albeit with an “effective mass” that may be different than the free electron mass. This is the case for electrons in gallium arsenide, and the resulting distribution has the shape of a parabola. Measurement of this parabola gives a direct measure of the electron’s effective mass in the material.

Exotic, unseen phenomena

The researchers used their technique to visualize electron behavior in gallium arsenide under various conditions. In several experimental runs, they observed “kinks” in the resulting parabola, which they interpreted as vibrations within the material.

“Gallium and arsenic atoms like to vibrate at certain frequencies or energies in this material,” Ashoori says. “When we have electrons at around those energies, they can excite those vibrations. And we could see that for the first time, in the little kinks that appeared in the spectrum.”

They also ran the experiments under a second, perpendicular magnetic field and were able to observe changes in electron behavior at given field strengths.

“In a perpendicular field, the parabolas or energies become discrete jumps, as a magnetic field makes electrons go around in circles inside this sheet,” Ashoori says.

“This has never been seen before.”

The researchers also found that, under certain magnetic field strengths, the ordinary parabola resembled two stacked donuts.

“It was really a shock to us,” Ashoori says.

They realized that the abnormal distribution was a result of electrons interacting with vibrating ions within the material.

“In certain conditions, we found we can make electrons and ions interact so strongly, with the same energy, that they look like some sort of composite particles: a particle plus a vibration together,” Jang says.

Further elaborating, Ashoori explains that “it’s like a plane, traveling along at a certain speed, then hitting the sonic barrier. Now there’s this composite thing of the plane and the sonic boom. And we can see this sort of sonic boom — we’re hitting this vibrational frequency, and there’s some jolt happening there.”

The team hopes to use its technique to explore even more exotic, unseen phenomena below the material surface.

“Electrons are predicted to do funny things like cluster into little bubbles or stripes,” Ashoori says. “These are things we hope to see with our tunneling technique. And I think we have the power to do that.”