Thirty Years in the Making: EUV in High-Volume Manufacturing
presented by George A. Gomba, Vice President of Worldwide Technology Research Programs, GlobalFoundries
Over 30 years after the initial EUV lithography demonstration, the semiconductor industry is poised to launch EUV lithography into high-volume manufacturing at the 7nm technology node. Recent developments in source power, resist performance and mask manufacturability have enabled this landmark transition, while extensive process and device enablement have been concurrently demonstrated, highlighting the in-fab advantages of EUV lithography. However, hurdles still remain for insertion and productivity suitable for high-volume manufacturing, and the industry must now start looking at the technology’s longevity beyond insertion, and the challenges that remain to achieve the ultimate printed feature resolution with high-NA EUV lithography.