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Cree announces the next generation of extreme high power LEDs

12/14/2016  The new XHP50.2 LED enables lighting manufacturers to quickly improve the performance of existing XHP50 lighting designs.

SEMICON China 2017 presents six forums in China's explosive growth market

12/14/2016  SEMI today announced the lineup for six forums at SEMICON China and FPD China held at the Shanghai New International Expo Centre on March 14-16, 2017.

SiFive named Startup of the Year

12/13/2016  SiFive, the first fabless provider of customized, open-source enabled RISC-V semiconductors, has been named "Startup of the Year" at the UBM Annual Creativity in Electronics (ACE) Awards held in conjunction with the Embedded Systems Conference Silicon Valley in San Jose.

Rapid and mass production of graphene, using microwaves

12/13/2016  Graphene, a material that could usher in the next generation of electronic and energy devices, could be closer than ever to mass production, thanks to microwaves.

SEMICON Japan 2016 opens tomorrow at Tokyo Big Sight

12/13/2016  SEMICON Japan 2016, the largest and most influential event for the electronics manufacturing supply chain in Japan, opens tomorrow at Tokyo Big Sight.

Imec and Holst Centre introduce world's first solid-state multi-ion sensor for IoT applications

12/13/2016  At last week's IEEE International Electron Devices Meeting (IEDM) in San Francisco (USA), imec, the world-leading research and innovation hub in nano-electronics and digital technology and Holst Centre debuted a miniaturized sensor that simultaneously determines pH and chloride (Cl-)levels in fluid.

Silicon Labs wins GSA's "Most Respected Public Semiconductor Company" for the second year in a row

12/12/2016  Silicon Labs takes the top spot among semiconductor companies achieving $500 million to $1 billion in annual sales at the Global Semiconductor Alliance (GSA) awards celebration held on Dec. 8 in Santa Clara, California.

Outfitting the future

12/12/2016  Wearable technology is about more than smartwatches or counting steps. Across North Carolina State University, researchers are using it to solve problems — monitoring heart rate and environmental dangers, powering electronic devices, delivering medications, building better prosthetics and improving safety.

ANU invention to inspire new night-vision specs

12/12/2016  Scientists at The Australian National University (ANU) have designed a nano crystal around 500 times smaller than a human hair that turns darkness into visible light and can be used to create light-weight night-vision glasses.

Global Semiconductor Alliance announces 2016 Award recipients

12/09/2016  The Global Semiconductor Alliance (GSA) is proud to announce the award recipients honored at the 2016 GSA Awards Dinner Celebration that took place in Santa Clara, California.

Stamping technique creates tiny circuits with electronic ink

12/09/2016  New stamping technique creates functional features at nanoscale dimensions.

State of the art sensors made from graphene and children's toy silly putty

12/09/2016  World-first graphene innovation could be used for applications in medical devices and diagnostics.

Mentor Graphics announces 2016 winners of Don Miller Award for Thermo-Fluid Design Excellence

12/09/2016  Mentor Graphics Corporation today announced the winners of its second annual Don Miller Award for Excellence in System-Level Thermo-Fluid Design.

University of California, Berkeley places order for PEALD deposition system from Ultratech Cambridge Nanotech

12/08/2016  Ultratech, Inc. announced that the Laboratory for Emerging and Exploratory Devices has chosen the Ultratech-CNT Fiji G2 PEALD system as its instrument of choice for its research activities.

Leti says FD-SOI light-sensing technique can make transistors far more sensitive to visible light

12/08/2016  In IEDM 2016 presentation, instituteÂ’s team demonstrates potential sensing advantages of integrating photodiodes below buried oxide.

Imec develops 3D-compatible germanium nMOS gate stack with high mobility and superior reliability

12/08/2016  At this week's IEEE IEDM conference, imec, the research and innovation hub in nano-electronics and digital technologies showed for the first time a silicon (Si)-passivated germanium (Ge) nMOS gate stack with dramatically reduced interface defect density (DIT) reaching the same level as a Si gate stack and with high mobility and reduced positive bias temperature instability (PBTI).

KLA-Tencor Evolves Inspection and Review Portfolio for 3D Future

07/10/2014  Systems detect and categorize defects that limit yield in advanced IC manufacturing.

How to Drive and Motivate Modern-Day Innovation

07/10/2014  Technology innovation isnÂ’t slowing down. But its steady acceleration isnÂ’t happening spontaneously, and TuesdayÂ’s Silicon Innovation Forum keynote from Professor of Innovation Dr. Bob Metcalfe outline how he believes to effectively drive the complex cycle that is modern-day innovation.

Vacuum Technologies Needed for 3D Device Processing

07/10/2014  Complex effluent management of ALD and CVD processes using novel precursors

Development of Silicon Photonics Devices Discussed in Forum

07/09/2014  Six speakers discussed developments in designing and manufacturing silicon photonics devices in a TechXPOT North session on Wednesday morning.