12/01/2005 Although computers and simulation software have accelerated product development, most electronic products eventually reach the traditional developmental stages of prototypes and samples.
12/01/2005 Whichever way you read the data or interpret the signs, modern product lifecycles are diminishing quickly enough to stretch the limits of feasibility.
11/30/2005 San Jose, CA — Tessera Technologies' senior VP and CTO, R. Douglas Norby, has informed the company of his plans to retire, and will remain in his position until Tessera names a successor. A search for Norby's replacement is currently underway.
11/30/2005 Jersey City, NJ — The U.S. Patent Office awarded patent #6,938,227 B2 to Cookson Electronics Assembly Materials Group for its ALPHA DIMENSIONS stencil configuration, design, and ordering software, effective August 30, 2005.
11/30/2005 Institute of Electrical and Electronics Engineers (IEEE) announced it has begun work on a new standard, "Standard Methods for the Characterization of Carbon Nanotubes Used as Additives in Bulk Materials". Known as IEEE P1690, the standard is expected to be the first to define methods for testing carbon nanotube additives and how to report the resulting performance data.
11/29/2005 Doru I. Florescu, Veeco Instruments Inc.
Metal-organic chemical-vapor deposition has steadily progressed from small-scale materials research to a mass production technology, enabling such complex optoelectronic devices as laser diodes and ultrahigh-brightness light-emitting diodes...
11/28/2005 November 28, 2005 -- Samsung Electronics Co. Ltd., Seoul, Korea, has reportedly manufactured the largest flexible thin-film transistor liquid-crystal display (TFT-LCD) that shows high enough resolution for digital television.
11/28/2005 November 28, 2005 -- Freescale Semiconductor, Austin, TX, has brought silicon nanocrystal memory technology a little closer to commercial reality. The company reports that it has produced a 24Mbit memory array based on Si nanocrystals, a denser, faster, nonvolatile option that may take the place of floating gate-based flash memories, due to the expectation that conventional embedded flash memory technology may reach its scaling limits within four years.
