September 22, 2003 – Researchers at Royal Philips Electronics, Amsterdam, The Netherlands, and the Inter-university Microelectronics Center (IMEC), Leuven, Belgium, say they have completed fabrication of 65nm CMOS devices.
The technology, based on a scaled-down version of planar 90nm bulk CMOS, features sub-20nm junction depths and 45nm gate lengths.
The companies say the technology achieved drive currents of 790 micro-amperes for NMOST and 355 micro-amperes for PMOST.