April 9, 2002 – Ottawa, Canada, and Hsinchu, Taiwan – ATMOS Corp. and Taiwan Semiconductor Manufacturing Company (TSMC) have agreed to develop, verify, and qualify ATMOS SoC-RAM CMOS embedded memory on TSMC’s Nexsys 90nm process technology.

The dense CMOS planar bit-cells will enable integration of up to twice the memory of standard SRAM, while minimizing leakage challenges arising in very deep sub-micron processes, according to the companies.

Under the agreement, TSMC will fabricate an ATMOS SoC-RAM embedded memory test chip. ATMOS, in turn, will deliver frontend views of the fully compiled embedded memory for TSMC’s 90nm process by the summer of 2002. The 90nm SoC-RAM will then join ATMOS’ silicon-proven planar macrocell family, which includes compiled memory targeted to TSMC’s 0.13-micron and 0.18-micron processes.