July 26, 2005 — Veeco Instruments Inc., Woodbury, NY, and Picogiga International, a division of the Soitec Group, have announced a joint development program (JDP) designed to advance gallium nitride (GaN)-on-silicon technology to speed the volume production of GaN-on-silicon substrates for commercialization into a wide range of high-end wireless applications. Under the terms of the agreement, the two companies plan to create the first industrial molecular-beam epitaxy (MBE) reactor optimized for use on Picogiga’s patented GaN-on-silicon process.

With this development, the companies hope to advance GaN-on-silicon substrates as a solution for wireless devices such as next-generation high electron-mobility transistors (HEMT). Initial work will take place in Veeco’s Process Integration Center in Saint Paul, MI. Upon completion, the new Gen200 system will be delivered and installed at Picogiga’s production facility in Les Ulis, France, enabling the company to produce up to 6-in. GaN-on-silicon epi wafers.