May 31, 2005 – AIXTRON AG today announced the delivery of an additional Thomas Swan MOCVD system for the mass production of gallium nitride (GaN)-based ultra high brightness LED wafers and chips to Genesis Photonics Inc., Taiwan.
The Thomas Swan large-scale GaN reactor is equipped with the patented close-coupled showerhead technology, has a capacity of 19×2″ wafers.
Genesis Photonics Inc. (GPI), established in January 2002 and headquartered in the Southern Taiwan Science-Base Industrial Park, focuses on providing GaN-based LED epi-wafers and chips for lighting, displays, backlights, and automotive applications, as well as for scientific, industrial, and research applications.