January 29, 2004 – Infineon Technologies AG, Munich, Germany; Genus Inc., Sunnyvale, CA; and the U. of Albany Center of Excellence in Nanoelectronics are partnering to develop next-generation memory chip devices.
Under the three-year, $12 million deal, teams from Infineon and Genus will join researchers at the 300mm wafer R&D complex at the Albany Nano-Tech center to develop and optimize atomic-layer deposition (ALD) processes for metal electrode and high-k dielectric materials for sub-45nm DRAM capacitors.