October 16, 2007 – IMEC has tipped initial results of alpha-demo work on extreme ultraviolet (EUV) lithography work which it says produced the first high-resolution images, and has agreed to push ahead with plans to add a “preproduction” tool from partner ASML in its 300mm facility in time for the 22nm node in 2010.
IMEC claims it has obtained horizontal and vertical 35nm and 40nm lines and spaces in 100nm MET-2D resist (from Rohm & Haas) at 18mJ/cm2, exposed with EUV using a Sn source (from Philips Extreme UV). The results “represent the first real data, building confidence for EUV to be a viable technology for 32nm half-pitch lithography and below,” noted Luc Van den hove, VP and COO of IMEC, in a statement.
IMEC noted that while the alpha tool work was mainly to pioneer EUV and demonstrate feasibility while building the infrastructure, the preproduction tool will have “considerably higher source power and optimized optics,” for enabling full-scale development of EUV up to production levels. ASML noted that its EUV systems “have the potential” for 100 wafers/hr throughput.