Translucent demos LED growth via one-step epitaxy with rare earth oxides on Si

July 18, 2011 – BUSINESS WIRE — Translucent Inc., rare-earth-oxide (REO) engineered silicon substrate provider, developed a proprietary GaN-on-Si wafer template with embedded distributed Bragg reflector (DBR) mirrors for one-step light emitting diode (LED) epitaxy on large-diameter wafers.

Translucent demonstrated the Mirrored Si technology on a 100mm-diameter wafer that exhibits high reflectivity using a lattice-matched REO material grown on a Si substrate, capped by a GaN layer that can support further nitride epitaxy for LED structure growth. The GaN-on-Si template’s embedded DBR mirror is directly lattice matched to the silicon substrate, mitigating strain during GaN growth. REO materials enable highly reflective mirrors embedded in engineered silicon substrates.

Translucent’s silicon-based process eliminates wafer handlers and substrate removal during subsequent wafer processing, creating a one-step epitaxial process. Crystalline interfaces show high quality, scalable to large wafers. Also read: LED makers shifting focus from efficacy to manufacturing efficiency for mass-market leap by Dr. Paula Doe

The material was grown using molecular beam epitaxy (MBE) reactors at Translucent

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