January 5, 2012 — Nocilis Materials, a spin-out from the Royal Institute of Technology (KTH, Sweden), opened its silicon foundry service globally. Nocilis Materials AB provides epitaxy service of advanced Si-Ge-Sn-C alloys for both electronic and photonic applications.

The foundry supplies advanced Si-based composed materials, with niches in IR & THz uncooled detectors and thermoelectric structures based on group IV materials. Its epitaxy services are based on RPCVD and epitaxy layers are provided on 4”, 6” and 8” substrates.

Details:

• P-, As- and B-doped Si and SiGeSnC layers (doping level of 10¹⁵-10¹⁹ cm^-3 in Si but for Si alloys depends on the material design)
• Selective epitaxy of doped and undoped SiGeC layers on patterned substrates
• Multilayer structures (superlattices) of Si-or Ge-based materials
• Ge (unstrained) on Si
• Compressive and tensile strained SiGe layers
• Strained Si on relaxed SiGe layers
• Tensile strained Ge layers (on-going)

Further services can be provided for material characterization of epitaxial films:

• High-resolution scanning electron microscopy (HRSEM). Planar and cross-sectional view
• High-resolution x-ray diffraction (HRXRD):
• Reciprocal lattice mapping (RLM), grazing angle measurement, strain measurement and layer profile over the substrate area. These analyses will provide the interfacial roughness, composition, strain amount (in-plane and perpendicular to the plane).

Nocilis Materials AB uses silicon epitaxy – and characterization equipment. Web: www.nocilismaterials.com.