February 8, 2012 — Cree Inc. (Nasdaq:CREE) reports doubling the lumens/dollar of light emitting diodes (LEDs) with its new silicon carbide (SiC) LED substrate technology.
The Cree XLamp XT-E White LED (pictured above) reportedly delivers twice the lumens-per-dollar of other LEDs, with high performance and efficacy. This product, and Cree’s XB-D LED are based on the new SiC platform. Cree expects the cost reducing materials platform to enable widespread adoption of LED lighting.
The XT-E LED offers up to 148 lumens per watt (LPW) at 85°C (or up to 162LPW at 25°C) at 350mA, in a 3.45 x 3.45mm XP footprint (same as its XP predecessor’s footprint). Its application for ENERGY STAR qualification requires only 3000 hours of XT–E LED LM-80 data, instead of the normal 6000 hours.
Samples are available immediately and production volumes are available with standard lead times.
Cree manufactures energy-efficient, mercury-free LED lighting products, as well as semiconductor products for power and radio frequency (RF) applications. For additional product and company information, please refer to www.cree.com.