eG ViaCoat is the latest in Alchimer’s eGTM series of electrochemical coating processes, for the metallization of high aspect ratio through-silicon vias (TSVs) used in advanced 3D packaging applications. It reportedly produces conformal, thin, uniform, and adherent copper seed layers, even on resistive barriers. It is said to enables significant reductions in cost of ownership (CoO) compared to dry vacuum processes.

eG ViaCoat is based on Alchimer’s proprietary electrografting (eG) technology, an electrochemical process based on specific organic precursors enabling the initiation and growth of nanometric films on conductive or semiconducting surfaces. eG ViaCoat is suitable for all applications requiring Cu metallization of TSVs: high-density vias for 3D-ICs such as stacking of memories, medium and low-density vias for image sensors, heterogeneous components integration and system-in-package (SiP) applications.

eG ViaCoat demonstrates conformal sidewall and bottom coverage, even when deposited on discontinuous surfaces such as highly ‘scalloped’ TSV etch profiles. It is compatible with standard barrier materials, including, but not limited to, PVD, CVD and ALD deposited Ta, TaN, Ti, TiN, WN, Ru and bi-layers. Alchimer S.A. Massey, France www.alchimer.com