AlSiC (aluminum silicon carbide) is a metal-matrix composite suited for base plates material for insulated gate bipolar transistors (IGBT) used in high-power traction, power control, hybrid electric vehicle power systems, and fly-by-wire applications. AlSiC has been tested and meets the requirements of the Restriction of Hazardous Substances Directive (RoHS compliant) of the European Parliament. The low isotropic coefficient of thermal expansion (CTE) value of AlSiC-9 (8 ppm/°C: 30-100°C) is compatible with the thermal expansion value of the die or substrate used in IGBT applications. The AlSiC CTE match reduces the mechanical stresses on IGBT die and substrates that is induced by thermal power cycling. The device compatible AlSiC CTE eliminates the need for stress compensation material layers that are required in Cu (CTE = 17ppm/°C) baseplate assemblies. CPS fabricates standard of 190 mm × 140 mm, 140 mm × 130 mm and 140 mm × 70 mm base plate formats (shown) as well as custom formats. CPS Technologies, Norton, MA; www.alsic.com.