Uniroyal Technology Ships High Brightness Blue 2 Milliwatt LEDS

April 5, 2001 — SARASOTA, FL — Uniroyal Technology Corporation’s Uniroyal Optoelectronics (UOE) division has begun distribution of two high brightness blue light emitting diode (LED) products.

“Uniroyal Optoelectronics is producing increasingly higher quality products from its Tampa facility, and we are excited by the progress of our Optoelectronics team. In less than two years since the completion of the cleanrooms in our facility, we have developed LED products with brightness levels reaching or exceeding the products currently on the market,” said Robert L. Soran, President and Chief Operating Officer of Uniroyal Technology Corporation.

UOE’s 450nm and 470nm high brightness blue LED die products have a minimum power output of 2 milliwatts in die form which, when conventionally packaged, is expected to result in packaged lamp power levels between 4 and 5 milliwatts. Both LED products combine indium gallium nitride (InGaN) materials on sapphire substrates producing higher efficiencies. The 450nm product is widely used by packagers and lighting designers for “white” light by incorporating a phosphor coating in the packaging design. Applications for this product include flashlights, nightlights, and other unique designs. The 470nm product is used in applications such as outdoor video displays, biomedical applications and instrumentation.

The demand for high brightness LEDs, according to industry sources, grew 54 percent in 2000 and is expected to continue to grow substantially for the next several years.

Uniroyal Technology’s Compound Semiconductors & Optoelectronics business segment includes Uniroyal Optoelectronics, Sterling Semiconductor, Inc., and NorLux Corp. Uniroyal Optoelectronics manufactures high brightness light emitting diodes (HB-LEDs), a rapidly growing market with applications such as traffic signals, indoor/outdoor signage and automotive applications. Sterling Semiconductor is a leading producer of silicon carbide (SiC) substrates, epitaxial thin films on SiC substrates and is developing SiC devices for wireless communications, industrial process control, and power amplification.

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