Infineon expands Dresden DRAM facility

Feb. 6, 2004–DRESDEN, Germany–Infineon Technologies will expand the Memory Development Center at its location here with the aim of further strengthening its DRAM and flash products.

The new building will include a development cleanroom at its center. Investments totaling around $120 million will be spent on the project over the next two years. Infineon currently expects to take on about 120 new hires for the Development Center expansion in the current fiscal year.

The Memory Development Center’s extra capacity will be housed in a new building complex to be constructed immediately next to Infineon’s existing semiconductor fab by early 2005.

Construction is scheduled to start in the middle of this year. When completed, the new complex will provide around 25,000 square feet of additional cleanroom space. Areas of suitable size will also be allocated to accommodate the technical infrastructure for the cleanroom as well as office space. The new adjunct to the Development Center will focus on the development of innovative memory concepts and fabrication processes on 300mm wafers for the manufacture of future memory generations. Infineon’s aim is to extend its technology and cost leadership in the global race to deliver the coming semiconductor generations.

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