JMAR advances x-ray mask development work

Aug. 9, 2006 – JMAR Technologies Inc. announced it received a $3.1 million award by Naval Air Systems Command (NAVAIR). This is the latest increment to be added to JMAR’s current contract, valued at $17.5 million, to continue development of sub-100nm feature x-ray masks and next generation nanolithography.

Under the contract, JMAR will use its patented x-ray stepper and point source technologies to develop x-ray masks for fabrication of high-speed C-RAM with 50-35 nanometer features, enabling 16 megabyte and higher densities for high-priority military and space applications.

Three JMAR X-Ray Lithography (XRL) stepper systems will be used in the development of these and other next-generation memory devices. The C-RAM program is a joint Navy/Air Force development effort for radiation-hardened, low power, silicon memory devices. In addition, as memory densities increase, C-RAM is intended be a faster, lower power replacement for non-volatile memory applications currently using Flash memory in cell phones, portable computers and other devices.

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