GE announces improved carbon nanotube diode

Aug. 19, 2005 — GE Global Research, the centralized research organization of the General Electric Co. (NYSE: GE), announced the development of a carbon nanotube diode that operates at what the company characterizes as the “theoretical limit” of performance.

GE said in a press release that the diode is a significant improvement upon the original nanotube diode device that it developed and announced last year. It added that the new diode could enable smaller and faster electronic devices.

GE published the work in the August 15 edition of Applied Physics Letters.

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