MRAM, MEMS device from Freescale and Angstrom headed for space

February 27, 2008 – An MRAM (magnetoresistive random access memory) device from Freescale Semiconductor is headed for space as part of a MEMS subsystem aboard a Japanese research satellite.

Angstrom Aerospace is using Freescale’s MRAM in its Tohoku-AAC MEMS Unit (TAMU), a magnetometer subsystem for the Japanese research satellite called SpriteSat. In developing the satellite subsystem, Angstrom Aerospace worked closely with Dr. Johan Akerman, a renowned Swedish professor of material physics and applied spintronics at the Royal Institute of Technology.

“I’ve worked with MRAM for years, and when it comes to reliability and endurance for data storage, there is no comparison to Freescale’s MRAM products,” said Johan Akerman. “Freescale’s 4Mbit MRAM device replaces both flash and battery-backed SRAM in Angstrom’s module for the SpriteSat. The ability to reconfigure critical programs and route definitions during various stages of a satellite mission is a significant benefit.”

TAMU will provide SpriteSat with magnetometer data of the Earth’s magnetic field. SpriteSat is built by the Tohoku University located in Sendai, Japan, under the supervision of Kazuya Yoshida. Scheduled to be launched in late 2008, SpriteSat’s mission is to monitor “sprite” phenomenon (lightning effects) in Earth’s upper atmosphere.

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